Ultrasensitive Room Temperature Infrared Photodetection Using a Narrow Bandgap Conjugated Polymer
[1]
- School of Chemistry and Biochemistry and School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA
- Sensor Directorate Air Force Research Laboratory Wright‐Patterson Air Force Base Dayton OH 45433 USA
- Photonics Initiative Advanced Science Research Center City University of New York New York NY 10031 USA, Department of Chemistry The Graduate Center City University of New York New York NY 10016 USA
- Photonics Initiative Advanced Science Research Center City University of New York New York NY 10031 USA, Department of Chemistry The Graduate Center City University of New York New York NY 10016 USA, Department of Physics The Graduate Center City University of New York New York NY 10016 USA
Abstract Photodetectors operating across the short‐, mid‐, and long‐wave infrared (SWIR–LWIR, λ = 1–14 µm) underpin modern science, technology, and society in profound ways. Narrow bandgap semiconductors that form the basis for these devices require complex manufacturing, high costs, cooling, and lack compatibility with silicon electronics, attributes that remain prohibitive for their widespread usage and the development of emerging technologies. Here, a photoconductive detector, fabricated using a solution‐processed narrow bandgap conjugated polymer is demonstrated that enables charge carrier generation in the infrared and ultrasensitive SWIR–LWIR photodetection at room temperature. Devices demonstrate an ultralow electronic noise that enables outstanding performance from a simple, monolithic device enabling a high detectivity ( D *, the figure of merit for detector sensitivity) >2.44 × 10 9 Jones (cm Hz 1/2 W −1 ) using the ultralow flux of a blackbody that mirrors the background emission of objects. These attributes, ease of fabrication, low dark current characteristics, and highly sensitive operation overcome major limitations inherent within modern narrow–bandgap semiconductors, demonstrate practical utility, and suggest that uncooled detectivities superior to many inorganic devices can be achieved at high operating temperatures.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- NONE; SC0022036; AC02-06CH11357
- OSTI ID:
- 2203979
- Alternate ID(s):
- OSTI ID: 2472089; OSTI ID: 2274852
- Journal Information:
- Advanced Science, Journal Name: Advanced Science Journal Issue: 36 Vol. 10; ISSN 2198-3844
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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