SiC as a core-edge integrated wall solution in DIII-D
- General Atomics, San Diego, CA (United States); General Atomics, DIII-D National Fusion Facility
- General Atomics, San Diego, CA (United States)
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- University of Tennessee, Knoxville, TN (United States)
- University of Toronto, ON (Canada)
- Independent Researcher
- University of California, San Diego, CA (United States)
Silicon carbide (SiC) is a promising material for use in a fusion reactor due to its low hydrogenic diffusivity, high temperature strength and resilience under neutron irradiation. To assess SiC as a main wall material in DIII-D, simulations with TRIM.SP and DIVIMP are performed on a well-diagnosed L-mode discharge. The effective charge, Zeff, across the separatrix is used as a figure of merit in comparing SiC to the current graphite walls. It is found that SiC is expected to reduce Zeff, potentially by as much as ~50%. It is discussed how SiC may be expected to "self-condition" and create wall conditions similar to siliconization, further lowering Zeff due to efficient oxygen gettering. Furthermore, the potential benefits are reviewed and a path towards SiC walls in DIII-D is presented.
- Research Organization:
- General Atomics, San Diego, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Fusion Energy Sciences (FES)
- Grant/Contract Number:
- FC02-04ER54698; FG02-07ER54917; AC05-00OR22725
- OSTI ID:
- 2203203
- Report Number(s):
- DOE-GA--54698
- Journal Information:
- Nuclear Materials and Energy, Journal Name: Nuclear Materials and Energy Vol. 37; ISSN 2352-1791
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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