Armor for Steel: Facile Synthesis of Hexagonal Boron Nitride Films on Various Substrates
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- Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA
- Department of Chemistry and Biochemistry New Mexico State University Las Cruces NM 88003 USA, NM Devices LLC 690 Canyon Point Las Cruces NM 88011 USA
- Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA, Department of Physics and Astronomy, University of Tennessee Knoxville 37996 United States
- Chemical Sciences Division, Oak Ridge National Laboratory Oak Ridge 37831 USA
- Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge 37831 USA
- Department of Materials Science and Engineering University of Tennessee Knoxville TN 37996 USA
- Department of Mechanical Engineering Union College Schenectady NY 12308 USA
- Department of Chemical and Biomolecular Engineering Vanderbilt University Nashville TN 37240 USA
- Department of Electrical Engineering and Computer Science The University of Tennessee Knoxville TN 37996 USA
Abstract While hexagonal boron nitride (hBN) has been widely used as a buffer or encapsulation layer for emerging electronic devices, interest in utilizing it for large‐area chemical barrier coating has somewhat faded. A chemical vapor deposition process is reported here for the conformal growth of hBN on large surfaces of various alloys and steels, regardless of their complex shapes. In contrast to the previously reported very limited protection by hBN against corrosion and oxidation, protection of steels against 10% HCl and oxidation resistance at 850 °C in air is demonstrated. Furthermore, an order of magnitude reduction in the friction coefficient of the hBN coated steels is shown. The growth mechanism is revealed in experiments on thin metal films, where the tunable growth of single‐crystal hBN with a selected number of layers is demonstrated. The key distinction of the process is the use of N 2 gas, which gets activated exclusively on the catalyst's surface and eliminates adverse gas‐phase reactions. This rate‐limiting step allowed independent control of activated nitrogen along with boron coming from a solid source (like elemental boron). Using abundant and benign precursors, this approach can be readily adopted for large‐scale hBN synthesis in applications where cost, production volume, and process safety are essential.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
- Grant/Contract Number:
- AC05-00OR22725; SC0022915
- OSTI ID:
- 2203150
- Journal Information:
- Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Journal Issue: 1 Vol. 11; ISSN 2196-7350
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
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