Epitaxial Growth of (−201) β-Ga 2 O 3 on (001) Diamond Substrates
Journal Article
·
· Crystal Growth and Design
- HH Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS8 1TL, United Kingdom
Not Available
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- SC0021230
- OSTI ID:
- 2202527
- Journal Information:
- Crystal Growth and Design, Journal Name: Crystal Growth and Design Journal Issue: 11 Vol. 23; ISSN 1528-7483
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- France
- Language:
- English
Similar Records
Deep level transient spectroscopy investigation of ultra-wide bandgap ($\bar201$) and ($001$) β-Ga2O3
Anisotropic electrical properties of NiO x /β-Ga 2 O 3 p-n heterojunctions on (2̅01), (001), and (010) crystal orientations
Design of kV-Class and Low R ON E-Mode β-Ga 2 O 3 Current Aperture Vertical Transistors With Delta-Doped β-(AlxGa 1−x ) 2 O 3 /Ga 2 O 3 Heterostructure
Journal Article
·
2020
· Journal of Applied Physics
·
OSTI ID:1853744
+8 more
Anisotropic electrical properties of NiO x /β-Ga 2 O 3 p-n heterojunctions on (2̅01), (001), and (010) crystal orientations
Journal Article
·
2023
· Applied Physics Express
·
OSTI ID:2421819
+7 more
Design of kV-Class and Low R ON E-Mode β-Ga 2 O 3 Current Aperture Vertical Transistors With Delta-Doped β-(AlxGa 1−x ) 2 O 3 /Ga 2 O 3 Heterostructure
Journal Article
·
2023
· IEEE Transactions on Electron Devices
·
OSTI ID:2579834