SiC Microchannel Heat Sinks for High Heat Flux Dissipation of 1 kW/cm2

Cassada, Nicole; Anderson, Caleb; Kubicek, London; Hobby, David; Frye, Clint; Baxamusa, Salmaan; Kotovsky, Jack; Jackson, Kathy; Ladner, Ian; Bandhauer, Todd

doi:10.1109/tcpmt.2023.3281772

Title: SiC Microchannel Heat Sinks for High Heat Flux Dissipation of 1 kW/cm²

Journal Article · 31 May 2023 · IEEE Transactions on Components, Packaging, and Manufacturing Technology

DOI: https://doi.org/10.1109/tcpmt.2023.3281772 · OSTI ID:2008197

^[1];

^[1]; Kubicek, London ^[1]; Hobby, David ^[1]; Frye, Clint ^[2];

^[2]; Kotovsky, Jack ^[2]; Jackson, Kathy ^[2]; Ladner, Ian ^[2]; Bandhauer, Todd ^[1]

Colorado State University, Fort Collins, CO (United States)
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Thermal management has become a major barrier in the development of high-power micro-devices. Microchannel heat sinks (MCHS) are a promising method to dissipate high heat fluxes from high power density devices. Reducing the thermal resistance will reduce the temperature increase of the electronic device, allowing for higher powers to be achieved while maintaining a safe operating temperature. This paper reports on the use of silicon carbide (Sic) microchannels to dissipate high heat fluxes up to 1 kW/cm² over a footprint of 0.25 cm². The use of high aspect ratio and decreased hydraulic diameter channels has allowed for very low thermal resistances to be achieved at higher heat duties compared to previous studies. The experiments performed resulted in heater temperatures of less than 60 °C and thermal resistances as low as 0.024 cm^{2 .} ° $$C$$/W between the heater surface and fluid inlet temperature. In conclusion, the demonstrated thermal performance of the SiC MCHS is an encouraging means for dissipating heat from high power density microelectronic devices.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: AC52-07NA27344; 21-SI-002

OSTI ID:: 2008197

Report Number(s):: LLNL-JRNL-844626; 1067241; TRN: US2406421

Journal Information:: IEEE Transactions on Components, Packaging, and Manufacturing Technology, Vol. 13, Issue 5; ISSN 2156-3950

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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Title: SiC Microchannel Heat Sinks for High Heat Flux Dissipation of 1 kW/cm2

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Title: SiC Microchannel Heat Sinks for High Heat Flux Dissipation of 1 kW/cm²