Anti-site defect-induced disorder in compensated topological magnet MnBi2-xSbxTe4

Lüpke, Felix; Kolmer, Marek; Yan, Jiaqiang; Chang, Hao; Vilmercati, Paolo; Weitering, Hanno H.; Ko, Wonhee; Li, An-Ping

doi:10.1038/s43246-023-00408-w

Title: Anti-site defect-induced disorder in compensated topological magnet MnBi_2-xSb_xTe₄

Journal Article · 08 October 2023 · Communications Materials

DOI: https://doi.org/10.1038/s43246-023-00408-w · OSTI ID:2008092

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^[2]; Yan, Jiaqiang ^[3]; Chang, Hao ^[4];

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Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); University of Tennessee, Knoxville, TN (United States); Forschungszentrum Jülich (Germany)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Ames Laboratory (AMES), Ames, IA (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); University of Tennessee, Knoxville, TN (United States)
University of Tennessee, Knoxville, TN (United States)

The gapped Dirac-like surface states of compensated magnetic topological insulator MnBi_2-xSb_xTe₄ (MBST) are a promising host for exotic quantum phenomena such as the quantum anomalous Hall effect and axion insulating state. However, it has become clear that atomic defects undermine the stabilization of such quantum phases as they lead to spatial variations in the surface state gap and doping levels. The large number of possible defect configurations in MBST make studying the influence of individual defects virtually impossible. Here, we present a statistical analysis of the nanoscale effect of defects in MBST with x=0.64, by scanning tunnelling microscopy/spectroscopy. Here, we identify (Bi,Sb)_Mn anti-site defects to be the main source of the observed doping fluctuations, leading towards the formation of nanoscale charge puddles and effectively closing the transport gap. Our findings will guide further optimization of this material system via defect engineering, to enable exploitation of its promising properties.

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Research Organization:: Ames Laboratory (AMES), Ames, IA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: AC02-07CH11358

OSTI ID:: 2008092

Alternate ID(s):: OSTI ID: 2008125

Report Number(s):: IS-J--11,163

Journal Information:: Communications Materials, Journal Name: Communications Materials Journal Issue: 1 Vol. 4; ISSN 2662-4443

Publisher:: Springer NatureCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Anti-site defect-induced disorder in compensated topological magnet MnBi2-xSbxTe4

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Title: Anti-site defect-induced disorder in compensated topological magnet MnBi_2-xSb_xTe₄