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Title: Room temperature polar and weak-ferromagnetic oxide with low dielectric loss

Journal Article · · Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
 [1]; ORCiD logo [1];  [2];  [2];  [3];  [4];  [4];  [5]
  1. SRM University-AP, Andhra Pradesh (India)
  2. Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur, Bangalore (India)
  3. UGC-DAE Consortium for Scientific Research Mumbai Centre, Mumbai (India)
  4. Univ. of Houston, TX (United States)
  5. Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Single-phase materials that are simultaneously ferroelectric and ferromagnetic at room temperature are promising for devices such as non-volatile random-access memory. Perovskite BiFeO3 which crystallizes in the polar rhombohedral structure (R3c) is ferroelectric and antiferromagnetic at room temperature. Here, we report a family of perovskite oxides in the BiFeO3 – Bi2/3TiO3 – ATiO3 (where A2+ is divalent alkaline earth metal ions e.g., Ca2+, Sr2+, Ba2+) ternary phase diagram that is polar as well as weak ferromagnetic above room temperature. The composition (Bi0.9167A0.075)(Fe0.9Ti0.1)O3 crystallizes in the polar rhombohedral structure space group R3c as corroborated by powder X-ray and neutron diffraction analysis. The nearly pure A-site perovskite possesses a long-range magnetic ordering above room temperature. Finally, these perovskites show a low dielectric loss, and the electrical response is dominated by grain contributions below 723 K.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC); Science and Engineering Research Board (SERB), India; Welch Foundation; National Science Foundation (NSF)
Grant/Contract Number:
AC05-00OR22725; ECR/2018/001252; E-1457; DMR-2002319
OSTI ID:
2001371
Journal Information:
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology, Vol. 298; ISSN 0921-5107
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

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