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Title: Modeling and design of III-V heterojunction solar cells for enhanced performance

Journal Article · · Cell Reports Physical Science

Heterojunctions can increase the efficiency of solar cell devices relative to homojunctions, but there is a large parameter space with significant tradeoffs that must be considered. Here, we present an experimental and computational study of III-V heterojunction solar cells and show how the emitter doping, emitter band gap, and heteroband offsets impact device efficiency. Efficiency is maximized by pushing the junction depletion region into the wider band gap material while minimizing the effects of heteroband offsets through optimized choice of emitter band gap, emitter electron affinity, and/or emitter doping density. We use these results to guide optimization of devices grown by halide vapor phase epitaxy, achieving 27% efficiency in a GaAs/GaInPAs heterojunction device. We also show that heterojunctions yield proportionally larger efficiency improvements in lower-quality materials. Although the modeling was developed and validated using III-V materials, the results are theoretically applicable to materials systems outside III-Vs.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOD; USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
AC36-08GO28308
OSTI ID:
1998630
Report Number(s):
NREL/JA--5900-86147; MainId:86920; UUID:50e5733f-93d2-45a7-a46e-def98cf432d2; MainAdminID:70069
Journal Information:
Cell Reports Physical Science, Journal Name: Cell Reports Physical Science Journal Issue: 9 Vol. 4; ISSN 2666-3864
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

References (40)

AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy journal October 2022
Influence of a Strong Electric Field on the Carrier Capture by Nonradiative Deep-Level Centers in GaAs journal July 1983
68.9% Efficient GaAs‐Based Photonic Power Conversion Enabled by Photon Recycling and Optical Resonance journal May 2021
68.9% Efficient GaAs‐Based Photonic Power Conversion Enabled by Photon Recycling and Optical Resonance journal July 2021
28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System journal December 2021
Electrical and optical properties of deep levels in MOVPE grown GaAs journal October 1981
On the band offsets of AlGaAs/GaAs and beyond journal February 1986
Material quality frontiers of MOVPE grown AlGaAs for minority carrier devices journal April 2017
Investigation of selective junctions using a newly developed tunnel current model for solar cell applications journal October 2015
Bandgap grading and Al0.3Ga0.7As heterojunction emitter for highly efficient GaAs-based solar cells journal October 2016
On the electrical properties of Si-doped InGaP layers grown by low pressure‐metalorganic vapor phase epitaxy journal August 2012
Understanding the Anisotropy in the Electrical Conductivity of CuPtB-type Ordered GaInP Thin Films by Combining In Situ TEM Biasing and First Principles Calculations journal July 2022
Hybrid Perovskite/Perovskite Heterojunction Solar Cells journal May 2016
Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy journal July 2019
Physics and chemistry of CdTe/CdS thin film heterojunction photovoltaic devices: fundamental and critical aspects journal January 2014
Electron traps in bulk and epitaxial GaAs crystals journal January 1977
Electron and hole capture cross-sections at deep centers in gallium arsenide journal January 1979
Defects in organometallic vapor-phase epitaxy-grown GaInP layers journal August 1991
Determination of the conduction-band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis journal April 1995
Schottky barrier heights and conduction-band offsets of In1−xGaxAs1−yPy lattice matched to GaAs journal August 1997
Determination of EL2 capture and emission coefficients in semi-insulating n-GaAs journal February 1999
Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy journal April 2001
Band alignment between GaAs and partially ordered GaInP journal April 2002
Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition journal January 1986
Midgap states in metalorganic vapor phase epitaxy grown AlxGa1−xAs journal October 1990
Optical enhancement of the open-circuit voltage in high quality GaAs solar cells journal March 2013
Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells journal July 2013
Behavior of the 0.82 eV and other dominant electron traps in organometallic vapor phase epitaxial AlxGa1−xAs journal October 1982
Reducing Shockley–Read–Hall recombination losses in the depletion region of a solar cell by using a wide-gap emitter layer journal October 2021
The influence of interface state and energy barriers on the efficiency of heterojunction solar cells journal April 1978
Effects of Internal Luminescence and Internal Optics on $V_{\bf oc}$ and $J_{\bf sc}$ of III--V Solar Cells journal October 2013
Generalized Optoelectronic Model of Series-Connected Multijunction Solar Cells journal November 2015
Tunable Bandgap GaInAsP Solar Cells With 18.7% Photoconversion Efficiency Synthesized by Low-Cost and High-Growth Rate Hydride Vapor Phase Epitaxy journal November 2018
Comparing Front- and Rear-Junction GaInP Photovoltaic Devices Through Detailed Numerical and Analytical Modeling journal March 2019
Point-Defects Assisted Zn-Diffusion in AlGaInP/GaInP Systems During the MOVPE Growth of Inverted Multijunction Solar Cells journal March 2021
Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics journal September 1957
Application of the superposition principle to solar-cell analysis journal March 1979
Minority‐carrier lifetime and photon recycling in n ‐GaAs
  • Ahrenkiel, R. K.; Keyes, B. M.; Lush, G. B.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 10, Issue 4 https://doi.org/10.1116/1.577892
journal July 1992
High-efficiency Silicon Heterojunction Solar Cells: A Review journal January 2012
III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy journal December 2018