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AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy
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October 2022 |
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Influence of a Strong Electric Field on the Carrier Capture by Nonradiative Deep-Level Centers in GaAs
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July 1983 |
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68.9% Efficient GaAs‐Based Photonic Power Conversion Enabled by Photon Recycling and Optical Resonance
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May 2021 |
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68.9% Efficient GaAs‐Based Photonic Power Conversion Enabled by Photon Recycling and Optical Resonance
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July 2021 |
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28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System
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December 2021 |
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Electrical and optical properties of deep levels in MOVPE grown GaAs
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October 1981 |
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On the band offsets of AlGaAs/GaAs and beyond
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February 1986 |
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Material quality frontiers of MOVPE grown AlGaAs for minority carrier devices
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April 2017 |
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Investigation of selective junctions using a newly developed tunnel current model for solar cell applications
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October 2015 |
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Bandgap grading and Al0.3Ga0.7As heterojunction emitter for highly efficient GaAs-based solar cells
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October 2016 |
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On the electrical properties of Si-doped InGaP layers grown by low pressure‐metalorganic vapor phase epitaxy
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August 2012 |
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Understanding the Anisotropy in the Electrical Conductivity of CuPtB-type Ordered GaInP Thin Films by Combining In Situ TEM Biasing and First Principles Calculations
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July 2022 |
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Hybrid Perovskite/Perovskite Heterojunction Solar Cells
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May 2016 |
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Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy
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July 2019 |
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Physics and chemistry of CdTe/CdS thin film heterojunction photovoltaic devices: fundamental and critical aspects
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January 2014 |
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Electron traps in bulk and epitaxial GaAs crystals
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January 1977 |
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Electron and hole capture cross-sections at deep centers in gallium arsenide
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January 1979 |
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Defects in organometallic vapor-phase epitaxy-grown GaInP layers
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August 1991 |
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Determination of the conduction-band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis
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April 1995 |
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Schottky barrier heights and conduction-band offsets of In1−xGaxAs1−yPy lattice matched to GaAs
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August 1997 |
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Determination of EL2 capture and emission coefficients in semi-insulating n-GaAs
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February 1999 |
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Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy
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April 2001 |
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Band alignment between GaAs and partially ordered GaInP
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April 2002 |
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Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition
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January 1986 |
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Midgap states in metalorganic vapor phase epitaxy grown AlxGa1−xAs
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October 1990 |
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Optical enhancement of the open-circuit voltage in high quality GaAs solar cells
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March 2013 |
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Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells
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July 2013 |
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Behavior of the 0.82 eV and other dominant electron traps in organometallic vapor phase epitaxial AlxGa1−xAs
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October 1982 |
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Reducing Shockley–Read–Hall recombination losses in the depletion region of a solar cell by using a wide-gap emitter layer
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October 2021 |
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The influence of interface state and energy barriers on the efficiency of heterojunction solar cells
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April 1978 |
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Effects of Internal Luminescence and Internal Optics on $V_{\bf oc}$ and $J_{\bf sc}$ of III--V Solar Cells
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October 2013 |
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Generalized Optoelectronic Model of Series-Connected Multijunction Solar Cells
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November 2015 |
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Tunable Bandgap GaInAsP Solar Cells With 18.7% Photoconversion Efficiency Synthesized by Low-Cost and High-Growth Rate Hydride Vapor Phase Epitaxy
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November 2018 |
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Comparing Front- and Rear-Junction GaInP Photovoltaic Devices Through Detailed Numerical and Analytical Modeling
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March 2019 |
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Point-Defects Assisted Zn-Diffusion in AlGaInP/GaInP Systems During the MOVPE Growth of Inverted Multijunction Solar Cells
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March 2021 |
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Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
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September 1957 |
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Application of the superposition principle to solar-cell analysis
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March 1979 |
Minority‐carrier lifetime and photon recycling in n ‐GaAs
- Ahrenkiel, R. K.; Keyes, B. M.; Lush, G. B.
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https://doi.org/10.1116/1.577892
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July 1992 |
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High-efficiency Silicon Heterojunction Solar Cells: A Review
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III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy
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