Photophysics of Intrinsic Single‐Photon Emitters in Silicon Nitride at Low Temperatures

Martin, Zachariah O.; Senichev, Alexander; Peana, Samuel; Lawrie, Benjamin J.; Lagutchev, Alexei S.; Boltasseva, Alexandra; Shalaev, Vladimir M.

doi:10.1002/qute.202300099

Title: Photophysics of Intrinsic Single‐Photon Emitters in Silicon Nitride at Low Temperatures

Journal Article · 20 August 2023 · Advanced Quantum Technologies

DOI: https://doi.org/10.1002/qute.202300099 · OSTI ID:1997776

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Purdue Univ., West Lafayette, IN (United States). Purdue Quantum Science and Engineering Institute; Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Quantum Science Center (QSC)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Quantum Science Center (QSC); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division

A robust process for fabricating intrinsic single-photon emitters in silicon nitride is recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with technologically mature silicon nitride photonics platforms. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2 to 300 K. Important insight into the potential for lifetime-limited linewidths is provided through measurements of inhomogeneous and temperature-dependent broadening of the zero-phonon lines. At 4.2 K, spectral diffusion is found to be the main broadening mechanism, while spectroscopy time series reveal zero-phonon lines with instrument-limited linewidths.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Purdue Univ., West Lafayette, IN (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1997776

Journal Information:: Advanced Quantum Technologies, Journal Name: Advanced Quantum Technologies Journal Issue: NA Vol. NA; ISSN 2511-9044

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Photophysics of Intrinsic Single‐Photon Emitters in Silicon Nitride at Low Temperatures

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