Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2D materials-coated substrates

Wang, Xuejing; Choi, Joonghoon; Yoo, Jinkyoung; Hong, Young Joon

doi:10.1186/s40580-023-00387-1

Title: Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2D materials-coated substrates

Journal Article · 29 August 2023 · Nano Convergence

DOI: https://doi.org/10.1186/s40580-023-00387-1 · OSTI ID:1997438

Wang, Xuejing; Choi, Joonghoon;

; Hong, Young Joon

Abstract Remote epitaxy has opened novel opportunities for advanced manufacturing and heterogeneous integration of two-dimensional (2D) materials and conventional (3D) materials. The lattice transparency as the fundamental principle of remote epitaxy has been studied and challenged by recent observations defying the concept. Understanding remote epitaxy requires an integrated approach of theoretical modeling and experimental validation at multi-scales because the phenomenon includes remote interactions of atoms across an atomically thin material and a few van der Waals gaps. The roles of atomically thin 2D material for the nucleation and growth of a 3D material have not been integrated into a framework of remote epitaxy research. Here, we summarize studies of remote epitaxy mechanisms with a comparison to other epitaxy techniques. In the end, we suggest the crucial topics of remote epitaxy research for basic science and applications. Graphical Abstract

View Journal Article

Cite

Export

Save

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: 89233218CNA000001; NA0003525

OSTI ID:: 1997438

Report Number(s):: LA-UR-23-23454; 40; PII: 387

Journal Information:: Nano Convergence, Journal Name: Nano Convergence Journal Issue: 1 Vol. 10; ISSN 2196-5404

Publisher:: Springer Science + Business MediaCopyright Statement

Country of Publication:: Germany

Language:: English

References (98)

Catalyst-Free GaN Nanorods Synthesized by Selective Area Growth Lin, Yen-Ting; Yeh, Ting-Wei; Nakajima, Yoshitake Advanced Functional Materials, Vol. 24, Issue 21 https://doi.org/10.1002/adfm.201303671	journal	February 2014
Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer Alaskar, Yazeed; Arafin, Shamsul; Wickramaratne, Darshana Advanced Functional Materials, Vol. 24, Issue 42 https://doi.org/10.1002/adfm.201400960	journal	August 2014
Position-Controlled Selective Growth of ZnO Nanorods on Si Substrates Using Facet-Controlled GaN Micropatterns Hong, Y. J.; An, S. J.; Jung, H. S. Advanced Materials, Vol. 19, Issue 24 https://doi.org/10.1002/adma.200701203	journal	December 2007
Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs Hong, Young Joon; Yang, Jae Won; Lee, Wi Hyoung Advanced Materials, Vol. 25, Issue 47 https://doi.org/10.1002/adma.201302312	journal	September 2013
Rational Kinetics Control toward Universal Growth of 2D Vertically Stacked Heterostructures Li, Fang; Feng, Yexin; Li, Ziwei Advanced Materials, Vol. 31, Issue 27 https://doi.org/10.1002/adma.201901351	journal	May 2019
The Road for 2D Semiconductors in the Silicon Age Wang, Shuiyuan; Liu, Xiaoxian; Zhou, Peng Advanced Materials, Vol. 34, Issue 48 https://doi.org/10.1002/adma.202106886	journal	February 2022
Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures with Indium-Rich Clusters Meng, Yulin; Wang, Lianshan; Zhao, Guijuan physica status solidi (a), Vol. 215, Issue 23 https://doi.org/10.1002/pssa.201800455	journal	September 2018
Graphene transfer methods: A review Ullah, Sami; Yang, Xiaoqin; Ta, Huy Q. Nano Research, Vol. 14, Issue 11 https://doi.org/10.1007/s12274-021-3345-8	journal	February 2021
Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system Koma, Atsushi Thin Solid Films, Vol. 216, Issue 1 https://doi.org/10.1016/0040-6090(92)90872-9	journal	August 1992
Fabrication and characterization of heterostructures with subnanometer thickness Koma, Atsushi; Sunouchi, Kazumasa; Miyajima, Takao Microelectronic Engineering, Vol. 2, Issue 1-3 https://doi.org/10.1016/0167-9317(84)90057-1	journal	October 1984
One-dimensional nanostructures: Chemistry, physics & applications Lieber, Charles M. Solid State Communications, Vol. 107, Issue 11 https://doi.org/10.1016/S0038-1098(98)00209-9	journal	August 1998
Raman and photoluminescence spectroscopy of free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off Ho, H. P.; Lo, K. C.; Siu, G. G. Materials Chemistry and Physics, Vol. 81, Issue 1 https://doi.org/10.1016/S0254-0584(03)00146-9	journal	July 2003
Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays Kishino, Katsumi; Sekiguchi, Hiroto; Kikuchi, Akihiko Journal of Crystal Growth, Vol. 311, Issue 7 https://doi.org/10.1016/j.jcrysgro.2008.11.056	journal	March 2009
Selective-area growth of thin GaN nanowires by MOCVD Choi, Kihyun; Arita, Munetaka; Arakawa, Yasuhiko Journal of Crystal Growth, Vol. 357 https://doi.org/10.1016/j.jcrysgro.2012.07.025	journal	October 2012
Domain-Matching Epitaxy of Ferroelectric Hf _0.5 Zr _0.5 O ₂ (111) on La _2/3 Sr _1/3 MnO ₃ (001) Estandía, Saul; Dix, Nico; Chisholm, Matthew F. Crystal Growth & Design, Vol. 20, Issue 6 https://doi.org/10.1021/acs.cgd.0c00095	journal	April 2020
Selective Area Epitaxy of GaN Nanostructures: MBE Growth and Morphological Analysis Hasan, Syed M. N.; You, Weicheng; Ghosh, Arnob Crystal Growth & Design, Vol. 23, Issue 6 https://doi.org/10.1021/acs.cgd.2c01506	journal	May 2023
Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links Kim, Hyunseok; Farrell, Alan C.; Senanayake, Pradeep Nano Letters, Vol. 16, Issue 3 https://doi.org/10.1021/acs.nanolett.5b04883	journal	February 2016
Full-Color Single Nanowire Pixels for Projection Displays Ra, Yong-Ho; Wang, Renjie; Woo, Steffi Y. Nano Letters, Vol. 16, Issue 7 https://doi.org/10.1021/acs.nanolett.6b01929	journal	June 2016
Lattice Transparency of Graphene Chae, Sieun; Jang, Seunghun; Choi, Won Jin Nano Letters, Vol. 17, Issue 3 https://doi.org/10.1021/acs.nanolett.6b04989	journal	February 2017
Fabrication of a Microcavity Prepared by Remote Epitaxy over Monolayer Molybdenum Disulfide Kim, Yeonhoo; Watt, John; Ma, Xuedan ACS Nano, Vol. 16, Issue 2 https://doi.org/10.1021/acsnano.1c08779	journal	February 2022
Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer Wang, Yuning; Qu, Yipu; Xu, Yu ACS Nano, Vol. 17, Issue 4 https://doi.org/10.1021/acsnano.3c00026	journal	February 2023
Toward Scalable Growth for Single-Crystal Graphene on Polycrystalline Metal Foil Jang, Hyeon-Sik; Lim, Jae-Young; Kang, Seog-Gyun ACS Nano, Vol. 14, Issue 3 https://doi.org/10.1021/acsnano.9b08305	journal	February 2020
Hybrid Full-Color Inorganic Light-Emitting Diodes Integrated on a Single Wafer Using Selective Area Growth and Adhesive Bonding Kang, Chang-Mo; Lee, Jun-Yeob; Kong, Duk-Jo ACS Photonics, Vol. 5, Issue 11 https://doi.org/10.1021/acsphotonics.8b00876	journal	September 2018
Screw Dislocation Driven Growth of Nanomaterials Meng, Fei; Morin, Stephen A.; Forticaux, Audrey Accounts of Chemical Research, Vol. 46, Issue 7 https://doi.org/10.1021/ar400003q	journal	June 2013
Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy Guo, Wei; Zhang, Meng; Banerjee, Animesh Nano Letters, Vol. 10, Issue 9 https://doi.org/10.1021/nl101027x	journal	September 2010
Vertically Aligned Cadmium Chalcogenide Nanowire Arrays on Muscovite Mica: A Demonstration of Epitaxial Growth Strategy Utama, Muhammad Iqbal Bakti; Peng, Zeping; Chen, Rui Nano Letters, Vol. 11, Issue 8 https://doi.org/10.1021/nl1034495	journal	August 2011
Inducing Electronic Changes in Graphene through Silicon (100) Substrate Modification Xu, Y.; He, K. T.; Schmucker, S. W. Nano Letters, Vol. 11, Issue 7 https://doi.org/10.1021/nl201022t	journal	July 2011
van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene Hong, Young Joon; Lee, Wi Hyoung; Wu, Yaping Nano Letters, Vol. 12, Issue 3 https://doi.org/10.1021/nl204109t	journal	February 2012
In _x Ga _{1– x} As Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation Mohseni, Parsian K.; Behnam, Ashkan; Wood, Joshua D. Nano Letters, Vol. 13, Issue 3 https://doi.org/10.1021/nl304569d	journal	February 2013
High-quality GaN films grown on chemical vapor-deposited graphene films Chung, Kunook; In Park, Suk; Baek, Hyeonjun NPG Asia Materials, Vol. 4, Issue 9 https://doi.org/10.1038/am.2012.45	journal	September 2012
Transferable single-crystal GaN thin films grown on chemical vapor-deposited hexagonal BN sheets Chung, Kunook; Oh, Hongseok; Jo, Janghyun NPG Asia Materials, Vol. 9, Issue 7 https://doi.org/10.1038/am.2017.118	journal	July 2017
GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies Yoon, Jongseung; Jo, Sungjin; Chun, Ik Su Nature, Vol. 465, Issue 7296 https://doi.org/10.1038/nature09054	journal	May 2010
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices Kobayashi, Yasuyuki; Kumakura, Kazuhide; Akasaka, Tetsuya Nature, Vol. 484, Issue 7393 https://doi.org/10.1038/nature10970	journal	April 2012
Van der Waals heterostructures Geim, A. K.; Grigorieva, I. V. Nature, Vol. 499, Issue 7459, p. 419-425 https://doi.org/10.1038/nature12385	journal	July 2013
Remote epitaxy through graphene enables two-dimensional material-based layer transfer Kim, Yunjo; Cruz, Samuel S.; Lee, Kyusang Nature, Vol. 544, Issue 7650 https://doi.org/10.1038/nature22053	journal	April 2017
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2583	journal	March 2013
Wetting transparency of graphene Rafiee, Javad; Mi, Xi; Gullapalli, Hemtej Nature Materials, Vol. 11, Issue 3 https://doi.org/10.1038/nmat3228	journal	January 2012
Flexible, foldable, actively multiplexed, high-density electrode array for mapping brain activity in vivo Viventi, Jonathan; Kim, Dae-Hyeong; Vigeland, Leif Nature Neuroscience, Vol. 14, Issue 12, p. 1599-1605 https://doi.org/10.1038/nn.2973	journal	November 2011
Roll-to-roll production of 30-inch graphene films for transparent electrodes Bae, Sukang; Kim, Hyeongkeun; Lee, Youngbin Nature Nanotechnology, Vol. 5, Issue 8, p. 574-578 https://doi.org/10.1038/nnano.2010.132	journal	June 2010
Graphene for displays that bend Ahn, Jong-Hyun; Hong, Byung Hee Nature Nanotechnology, Vol. 9, Issue 10 https://doi.org/10.1038/nnano.2014.226	journal	October 2014
Van der Waals interfacial reconstruction in monolayer transition-metal dichalcogenides and gold heterojunctions Luo, Ruichun; Xu, Wen Wu; Zhang, Yongzheng Nature Communications, Vol. 11, Issue 1 https://doi.org/10.1038/s41467-020-14753-8	journal	February 2020
Exploring physics of ferroelectric domain walls via Bayesian analysis of atomically resolved STEM data Nelson, Christopher T.; Vasudevan, Rama K.; Zhang, Xiaohang Nature Communications, Vol. 11, Issue 1 https://doi.org/10.1038/s41467-020-19907-2	journal	December 2020
Polarity governs atomic interaction through two-dimensional materials Kong, Wei; Li, Huashan; Qiao, Kuan Nature Materials, Vol. 17, Issue 11 https://doi.org/10.1038/s41563-018-0176-4	journal	October 2018
Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire Li, Taotao; Guo, Wei; Ma, Liang Nature Nanotechnology, Vol. 16, Issue 11 https://doi.org/10.1038/s41565-021-00963-8	journal	September 2021
High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process Kim, Hyunseok; Liu, Yunpeng; Lu, Kuangye Nature Nanotechnology, Vol. 18, Issue 5 https://doi.org/10.1038/s41565-023-01340-3	journal	March 2023
Van der Waals integration before and beyond two-dimensional materials Liu, Yuan; Huang, Yu; Duan, Xiangfeng Nature, Vol. 567, Issue 7748 https://doi.org/10.1038/s41586-019-1013-x	journal	March 2019
Graphene and two-dimensional materials for silicon technology Akinwande, Deji; Huyghebaert, Cedric; Wang, Ching-Hua Nature, Vol. 573, Issue 7775 https://doi.org/10.1038/s41586-019-1573-9	journal	September 2019
Highly efficient blue InGaN nanoscale light-emitting diodes Sheen, Mihyang; Ko, Yunhyuk; Kim, Dong-uk Nature, Vol. 608, Issue 7921 https://doi.org/10.1038/s41586-022-04933-5	journal	August 2022
Non-epitaxial single-crystal 2D material growth by geometric confinement Kim, Ki Seok; Lee, Doyoon; Chang, Celesta S. Nature, Vol. 614, Issue 7946 https://doi.org/10.1038/s41586-022-05524-0	journal	January 2023
Vertical full-colour micro-LEDs via 2D materials-based layer transfer Shin, Jiho; Kim, Hyunseok; Sundaram, Suresh Nature, Vol. 614, Issue 7946 https://doi.org/10.1038/s41586-022-05612-1	journal	February 2023
Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices Kum, Hyun; Lee, Doeon; Kong, Wei Nature Electronics, Vol. 2, Issue 10 https://doi.org/10.1038/s41928-019-0314-2	journal	October 2019
Reconfigurable heterogeneous integration using stackable chips with embedded artificial intelligence Choi, Chanyeol; Kim, Hyunseok; Kang, Ji-Hoon Nature Electronics, Vol. 5, Issue 6 https://doi.org/10.1038/s41928-022-00778-y	journal	June 2022
Remote epitaxy Kim, Hyunseok; Chang, Celesta S.; Lee, Sangho Nature Reviews Methods Primers, Vol. 2, Issue 1 https://doi.org/10.1038/s43586-022-00122-w	journal	June 2022
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Jung, Byung Oh; Bae, Si-Young; Kato, Yoshihiro CrystEngComm, Vol. 16, Issue 11 https://doi.org/10.1039/C3CE42266F	journal	January 2014
Enhanced nucleation of germanium on graphene via dipole engineering Yoo, Jinkyoung; Ahmed, Towfiq; Chen, Renjie Nanoscale, Vol. 10, Issue 12 https://doi.org/10.1039/C7NR06684H	journal	January 2018
Controlled epitaxial growth modes of ZnO nanostructures using different substrate crystal planes Hong, Young Joon; Yoo, Jinkyoung; Doh, Yong-Joo Journal of Materials Chemistry, Vol. 19, Issue 7 https://doi.org/10.1039/b816034a	journal	January 2009
Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001) Brault, J.; Gendry, M.; Grenet, G. Applied Physics Letters, Vol. 73, Issue 20 https://doi.org/10.1063/1.122634	journal	November 1998
Structural characterization and strain relaxation in porous GaN layers Mynbaeva, M.; Titkov, A.; Kryganovskii, A. Applied Physics Letters, Vol. 76, Issue 9 https://doi.org/10.1063/1.125955	journal	February 2000
Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells Lin, Yen-Sheng; Ma, Kung-Jeng; Hsu, C. Applied Physics Letters, Vol. 77, Issue 19 https://doi.org/10.1063/1.1323542	journal	November 2000
Vapor-liquid-solid mechanism of single crystal growth Wagner, R. S.; Ellis, W. C. Applied Physics Letters, Vol. 4, Issue 5, p. 89-90 https://doi.org/10.1063/1.1753975	journal	March 1964
Self-catalysis: A contamination-free, substrate-free growth mechanism for single-crystal nanowire and nanotube growth by chemical vapor deposition Noor Mohammad, S. The Journal of Chemical Physics, Vol. 125, Issue 9 https://doi.org/10.1063/1.2229195	journal	September 2006
Self-catalytic solution for single-crystal nanowire and nanotube growth Noor Mohammad, S. The Journal of Chemical Physics, Vol. 127, Issue 24 https://doi.org/10.1063/1.2813432	journal	December 2007
Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy Tang, Tsung-Yi; Shiao, Wen-Yu; Lin, Cheng-Hung Journal of Applied Physics, Vol. 105, Issue 2 https://doi.org/10.1063/1.3065527	journal	January 2009
Electronic structure and band-gap modulation of graphene via substrate surface chemistry Shemella, Philip; Nayak, Saroj K. Applied Physics Letters, Vol. 94, Issue 3 https://doi.org/10.1063/1.3070238	journal	January 2009
Strain relaxation in short-period polar GaN/AlN superlattices Kandaswamy, P. K.; Bougerol, C.; Jalabert, D. Journal of Applied Physics, Vol. 106, Issue 1 https://doi.org/10.1063/1.3168431	journal	July 2009
Role of transferred graphene on atomic interaction of GaAs for remote epitaxy Kim, Hyunseok; Kim, Jong Chan; Jeong, Yoongu Journal of Applied Physics, Vol. 130, Issue 17 https://doi.org/10.1063/5.0064232	journal	November 2021
Enhanced van der Waals epitaxy of germanium by out-of-plane dipole moment induced from transferred graphene on TiN/AlN multilayers Wang, Xuejing; Kim, Yeonhoo; Baldwin, Jon K. Journal of Applied Physics, Vol. 130, Issue 20 https://doi.org/10.1063/5.0065306	journal	November 2021
Plastic relaxation and relaxed buffer layers for semiconductor epitaxy Beanland, R.; Dunstan, D. J.; Goodhew, P. J. Advances in Physics, Vol. 45, Issue 2 https://doi.org/10.1080/00018739600101477	journal	April 1996
Ultrathin Wafer Pre-Assembly and Assembly Process Technologies: A Review Marks, Michael Raj; Hassan, Zainuriah; Cheong, Kuan Yew Critical Reviews in Solid State and Materials Sciences, Vol. 40, Issue 5 https://doi.org/10.1080/10408436.2014.992585	journal	May 2015
Semiconductor nanowires Lu, Wei; Lieber, Charles M. Journal of Physics D: Applied Physics, Vol. 39, Issue 21 https://doi.org/10.1088/0022-3727/39/21/R01	journal	October 2006
Epitaxy Stringfellow, G. B. Reports on Progress in Physics, Vol. 45, Issue 5 https://doi.org/10.1088/0034-4885/45/5/001	journal	May 1982
Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch Dede, Didem; Glas, Frank; Piazza, Valerio Nanotechnology, Vol. 33, Issue 48 https://doi.org/10.1088/1361-6528/ac88d9	journal	September 2022
Damage mitigation in roll-to-roll transfer of CVD-graphene to flexible substrates Jang, Bongkyun; Kim, Chang-Hyun; Choi, Seung Tae 2D Materials, Vol. 4, Issue 2 https://doi.org/10.1088/2053-1583/aa57fa	journal	January 2017
Semiconductor nanowire heterostructures Lauhon, L. J.; Gudiksen, Mark S.; Lieber, Charles M. Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences, Vol. 362, Issue 1819 https://doi.org/10.1098/rsta.2004.1377	journal	June 2004
p x , y -orbital counterpart of graphene: Cold atoms in the honeycomb optical lattice Wu, Congjun; Das Sarma, S. Physical Review B, Vol. 77, Issue 23 https://doi.org/10.1103/PhysRevB.77.235107	journal	June 2008
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates Dora, Y.; Chakraborty, A.; Mccarthy, L. IEEE Electron Device Letters, Vol. 27, Issue 9, p. 713-715 https://doi.org/10.1109/LED.2006.881020	journal	September 2006
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si Fitzgerald, E. A. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 10, Issue 4 https://doi.org/10.1116/1.586204	journal	July 1992
Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle Jeong, Junseok; Wang, Qingxiao; Cha, Janghwan Science Advances, Vol. 6, Issue 23 https://doi.org/10.1126/sciadv.aaz5180	journal	June 2020
Full-color active-matrix organic light-emitting diode display on human skin based on a large-area MoS ₂ backplane Choi, Minwoo; Bae, Sa-Rang; Hu, Luhing Science Advances, Vol. 6, Issue 28 https://doi.org/10.1126/sciadv.abb5898	journal	July 2020
Heterogeneous Three-Dimensional Electronics by Use of Printed Semiconductor Nanomaterials Ahn, Jong-Hyun; Kim, Hoon-Sik; Lee, Keon Jae Science, Vol. 314, Issue 5806, p. 1754-1757 https://doi.org/10.1126/science.1132394	journal	December 2006
Printed Assemblies of Inorganic Light-Emitting Diodes for Deformable and Semitransparent Displays Park, S.-I.; Xiong, Y.; Kim, R.-H. Science, Vol. 325, Issue 5943, p. 977-981 https://doi.org/10.1126/science.1175690	journal	August 2009
Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices Chung, Kunook; Lee, Chul-Ho; Yi, Gyu-Chul Science, Vol. 330, Issue 6004 https://doi.org/10.1126/science.1195403	journal	October 2010
Layer-Resolved Graphene Transfer via Engineered Strain Layers Kim, J.; Park, H.; Hannon, J. B. Science, Vol. 342, Issue 6160, p. 833-836 https://doi.org/10.1126/science.1242988	journal	October 2013
The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper Hao, Y.; Bharathi, M. S.; Wang, L. Science, Vol. 342, Issue 6159 https://doi.org/10.1126/science.1243879	journal	October 2013
Emergence of room-temperature ferroelectricity at reduced dimensions Lee, D.; Lu, H.; Gu, Y. Science, Vol. 349, Issue 6254 https://doi.org/10.1126/science.aaa6442	journal	September 2015
2D materials and van der Waals heterostructures Novoselov, K. S.; Mishchenko, A.; Carvalho, A. Science, Vol. 353, Issue 6298 https://doi.org/10.1126/science.aac9439	journal	July 2016
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials Shim, Jaewoo; Bae, Sang-Hoon; Kong, Wei Science, Vol. 362, Issue 6415 https://doi.org/10.1126/science.aat8126	journal	October 2018
Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors Kim, Yeongin; Suh, Jun Min; Shin, Jiho Science, Vol. 377, Issue 6608 https://doi.org/10.1126/science.abn7325	journal	August 2022
Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy Hiramatsu, Kazumasa; Akasaki, Theeradetch Detchprohm Japanese Journal of Applied Physics, Vol. 32, Issue 4R https://doi.org/10.1143/JJAP.32.1528	journal	April 1993
Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff Michael K. Kelly, Michael K. Kelly; Robert P. Vaudo, Robert P. Vaudo; Vivek M. Phanse, Vivek M. Phanse Japanese Journal of Applied Physics, Vol. 38, Issue 3A https://doi.org/10.1143/JJAP.38.L217	journal	March 1999
InGaN-BASED LASER DIODES Nakamura, Shuji Annual Review of Materials Science, Vol. 28, Issue 1 https://doi.org/10.1146/annurev.matsci.28.1.125	journal	August 1998
Effects of Laser Sources on Damage Mechanisms and Reverse-Bias Leakages of Laser Lift-Off GaN-Based LEDs Cheng, Ji-Hao; Wu, YewChung Sermon; Peng, Wei Chih Journal of The Electrochemical Society, Vol. 156, Issue 8 https://doi.org/10.1149/1.3148251	journal	January 2009
Graphene Quantum Size Effect, Zigzag Edge States and Substrate Semitransparency Lyding, Joseph; Ritter, Kyle; He, Kevin ECS Meeting Abstracts, Vol. MA2010-01, Issue 23 https://doi.org/10.1149/MA2010-01/23/1197	journal	February 2010
A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology Jung, Minhyun; Gaddam, Venkateswarlu; Jeon, Sanghun Nano Convergence, Vol. 9, Issue 1 https://doi.org/10.1186/s40580-022-00333-7	journal	October 2022
Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review Ji, Jongho; Kwak, Hoe-Min; Yu, Jimyeong Nano Convergence, Vol. 10, Issue 1 https://doi.org/10.1186/s40580-023-00368-4	journal	April 2023
Applications of remote epitaxy and van der Waals epitaxy Roh, Ilpyo; Goh, Seok Hyeon; Meng, Yuan Nano Convergence, Vol. 10, Issue 1 https://doi.org/10.1186/s40580-023-00369-3	journal	April 2023
Suppression of phase separation in InGaN due to elastic strain Karpov, S. Yu. MRS Internet Journal of Nitride Semiconductor Research, Vol. 3 https://doi.org/10.1557/S1092578300000880	journal	January 1998
Formation Mechanism of GaN Nanowires with Various Shapes on Si(111) Noh, Siyun; Han, Sangmoon; Choi, Ilgyu Journal of the Korean Physical Society, Vol. 77, Issue 3 https://doi.org/10.3938/jkps.77.247	journal	August 2020

Similar Records

Remote Epitaxial Growth of Compound Semiconductors through Graphene

Conference · 2020 · OSTI ID:1780764

Lee, Kyusang; Kim, Jeehwan

Thickness-dependent spin bistable transitions in single-crystalline molecular 2D material

Journal Article · 2022 · npj 2D Materials and Applications · OSTI ID:1885829

Koptur-Palenchar, John; Gakiya-Teruya, Miguel; Le, Duy; +7 more

Epitaxial Growth of 2D Core‐Crown SnS ₂ /SnSe ₂ Heterostructure Through Interfacial Modification with Polyvinylpyrrolidone

Journal Article · 2025 · Small · OSTI ID:2530496

Liu, Lili; Song, Duo; Kaiser, Mitchell E.; +3 more

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
Advanced manufacturing
Epitaxy mechanism
Heterogeneous integration
Incommensurate materials
Material Science
Remote epitaxy
Semiconductors
Two-dimensional materials

Title: Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2D materials-coated substrates

Citation Formats

References (98)

Similar Records

Related Subjects