Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield

Binder, Andrew T.; Cooper, James A.; Steinfeldt, Jeffrey; Allerman, Andrew A.; Floyd, Richard; Yates, Luke; Kaplar, Robert J.

doi:10.1016/j.prime.2023.100218

Title: Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield

Journal Article · 01 September 2023 · e-Prime, Advances in Electrical Engineering, Electronics and Energy

DOI: https://doi.org/10.1016/j.prime.2023.100218 · OSTI ID:1996311

; Cooper, James A.; Steinfeldt, Jeffrey; Allerman, Andrew A.;

; Yates, Luke; Kaplar, Robert J.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Office of Sustainable Transportation. Vehicle Technologies Office (VTO)

Grant/Contract Number:: NA0003525

OSTI ID:: 1996311

Report Number(s):: SAND--2023-08567J; S2772671123001134; 100218; PII: S2772671123001134

Journal Information:: e-Prime, Advances in Electrical Engineering, Electronics and Energy, Journal Name: e-Prime, Advances in Electrical Engineering, Electronics and Energy Journal Issue: C Vol. 5; ISSN 2772-6711

Publisher:: ElsevierCopyright Statement

Country of Publication:: United Kingdom

Language:: English

References (19)

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Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching Li, Bingjun; Wang, Sizhen; Nami, Mohsen ACS Applied Materials & Interfaces, Vol. 13, Issue 44 https://doi.org/10.1021/acsami.1c16221	journal	October 2021
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The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices Fu, Kai; Fu, Houqiang; Deng, Xuguang Applied Physics Letters, Vol. 118, Issue 22 https://doi.org/10.1063/5.0049473	journal	May 2021
CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion Chowdhury, Srabanti; Wong, Man Hoi; Swenson, Brian L. IEEE Electron Device Letters, Vol. 33, Issue 1 https://doi.org/10.1109/LED.2011.2173456	journal	January 2012
600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor Li, Ray; Cao, Yu; Chen, Mary IEEE Electron Device Letters, Vol. 37, Issue 11 https://doi.org/10.1109/LED.2016.2614515	journal	November 2016
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Zhang, Yuhao; Liu, Zhihong; Tadjer, Marko J. IEEE Electron Device Letters, Vol. 38, Issue 8 https://doi.org/10.1109/LED.2017.2720689	journal	August 2017
Generation-After-Next Power Electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials Kaplar, Robert J.; Neely, Jason C.; Huber, Dale L. IEEE Power Electronics Magazine, Vol. 4, Issue 1 https://doi.org/10.1109/MPEL.2016.2643098	journal	March 2017
A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs Ji, Dong; Li, Wenwen; Chowdhury, Srabanti IEEE Transactions on Electron Devices, Vol. 65, Issue 10 https://doi.org/10.1109/TED.2018.2864260	journal	October 2018
GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD Yang, Chen; Fu, Houqiang; Kumar, Viswanathan Naveen IEEE Transactions on Electron Devices, Vol. 67, Issue 10 https://doi.org/10.1109/TED.2020.3010183	journal	October 2020
1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability Liu, Jingcun; Xiao, Ming; Zhang, Ruizhe IEEE Transactions on Electron Devices, Vol. 68, Issue 4 https://doi.org/10.1109/TED.2021.3059192	journal	April 2021
Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions Yates, Luke; Gunning, Brendan P.; Crawford, Mary H. IEEE Transactions on Electron Devices, Vol. 69, Issue 4 https://doi.org/10.1109/TED.2022.3154665	journal	April 2022
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42 ENGINEERING
buried field shield
gallium nitride
gate oxide protection
trench MOSFET
vertical GaN

Title: Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield

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