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Title: Long operating lifetime mid-infrared LEDs based on black phosphorus

Journal Article · · Nature Communications

Abstract Black phosphorus (BP) is a narrow bandgap layered semiconductor promising for mid-infrared optoelectronic applications. BP-based devices have been shown to surpass state-of-the-art mid-infrared detectors and light-emitting diodes (LEDs) in terms of performance. Despite their device advantages, the material’s inherent instability in the air could hinder its use in practical optoelectronic applications. Here, we investigated the impact of passivation on the device lifetime of BP LEDs, which deteriorate in a matter of seconds without using passivation. The lifetime is significantly extended with an Al 2 O 3 passivation layer and nitrogen packaging via atomic layer deposition and ultra-violet curable resin sealing. The operational lifetime (half-life) at room temperature is extrapolated to be ~15,000 h with an initial power density of 340 mW/cm 2 based on accelerated life testing. The present results indicate that efficient BP optoelectronics can be highly robust through simple and scalable packaging technologies, with important practical implications for mid-infrared applications.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Grant/Contract Number:
AC02-05CH11231
OSTI ID:
1994599
Journal Information:
Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 14; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United Kingdom
Language:
English

References (38)

Band-to-Band Radiative Recombination in Groups IV, VI, and III-V Semiconductors (I) journal January 1967
Seal Encapsulation: OLED Sealing Processes book January 2018
Relative stability of red and black phosphorus at P<1 GPa journal January 1992
Recombination coefficients in extrinsicn-InSb journal March 1976
Density functional theory study of inter-layer coupling in bulk tin selenide journal March 2018
Radiatively Dominated Charge Carrier Recombination in Black Phosphorus journal June 2016
Black Phosphorus Mid-Infrared Light-Emitting Diodes Integrated with Silicon Photonic Waveguides journal August 2020
Bright Mid-Wave Infrared Resonant-Cavity Light-Emitting Diodes Based on Black Phosphorus journal January 2022
Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation journal June 2015
Oxidation Resistance of Monolayer Group-IV Monochalcogenides journal March 2017
Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors journal February 2015
Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors journal October 2016
Mid-Wave Infrared Photoconductors Based on Black Phosphorus-Arsenic Alloys journal September 2017
Quantitative Tracking of the Oxidation of Black Phosphorus in the Few-Layer Regime journal October 2018
Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation journal November 2014
Producing air-stable monolayers of phosphorene and their defect engineering journal January 2016
High-quality sandwiched black phosphorus heterostructure and its quantum oscillations journal June 2015
Photooxidation and quantum confinement effects in exfoliated black phosphorus journal May 2015
Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction journal June 2015
Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current journal March 2015
Anomalous thickness dependence of photoluminescence quantum yield in black phosphorous journal March 2023
Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature journal August 2018
A wavelength-scale black phosphorus spectrometer journal April 2021
Characterization of stability and challenges to improve lifetime in perovskite LEDs journal August 2021
Actively variable-spectrum optoelectronics with black phosphorus journal August 2021
Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells journal November 1998
Physical mechanism responsible for the stretched exponential decay behavior of aging organic light-emitting diodes journal November 2005
Determination of charge transport activation energy and injection barrier in organic semiconductor devices journal September 2017
Organic electroluminescent diodes journal September 1987
The renaissance of black phosphorus journal March 2015
GaSb photovoltaic cells for applications in TPV generators journal April 2003
The Auger recombination coefficient in InAs and GaSb derived from the infrared dynamical plasma reflectivity journal March 2002
Reliable passivation of black phosphorus by thin hybrid coating journal June 2017
Organic Electronics book August 2020
Picosecond carrier dynamics and studies of Auger recombination processes in indium arsenide at room temperature journal November 1992
Oxygen Defects in Phosphorene journal January 2015
Characterization of (Hg,Cd)Te by the photoconductive decay technique
  • Lopes, V. C.; Wright, W. H.; Syllaios, A. J.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 8, Issue 2 https://doi.org/10.1116/1.576937
journal March 1990
Broadband electro-optic polarization conversion with atomically thin black phosphorus journal October 2021