Growth interface study of CdTeSe crystals grown by the THM technique

Roy, Utpal N.; Camarda, Giuseppe S.; Cui, Yonggang; James, Ralph B.

doi:10.1016/j.jcrysgro.2023.127261

Title: Growth interface study of CdTeSe crystals grown by the THM technique

Journal Article · 16 May 2023 · Journal of Crystal Growth

DOI: https://doi.org/10.1016/j.jcrysgro.2023.127261 · OSTI ID:1993022

Roy, Utpal N. ^[1]; Camarda, Giuseppe S. ^[2]; Cui, Yonggang ^[2]; James, Ralph B. ^[1]

Savannah River National Laboratory (SRNL), Aiken, SC (United States)
Brookhaven National Laboratory (BNL), Upton, NY (United States)

The Traveling Heater Method (THM) is a widely accepted technique to grow high-quality detector grade CdTe and CdZnTe ingots, especially for X-ray and gamma-ray detector applications. Unlike melt-growth techniques, the growth interface for ingots produced by the THM technique consists of two different compounds, viz. the solidified region (just below the interface) consists of the compound to be grown (e.g., CdZnTe for CdZnTe growth), while the molten zone just above the growth interface consists of Te-rich CdZnTe. Thus, optimization of the growth parameters is critical to obtain a clean growth interface with the required shape and presence of minimal Te-rich inclusions. Here, in this study, CdTeSe ingots were grown employing the THM technique to investigate the growth interface. Both macroscopic and microscopic behavior of the interface were studied. The study revealed that a microscopically smooth growth interface can be achieved by optimizing the growth parameters, which is essential for obtaining high-quality, inclusion-free ingots.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Savannah River National Laboratory (SRNL), Aiken, SC (United States); Savannah River Site (SRS), Aiken, SC (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation; USDOE Laboratory Directed Research and Development (LDRD) Program

Grant/Contract Number:: 89303321CEM000080; SC0012704

OSTI ID:: 1993022

Alternate ID(s):: OSTI ID: 1989618

Report Number(s):: SRNL-STI-2023-00147; BNL-224552-2023-JAAM

Journal Information:: Journal of Crystal Growth, Vol. 616; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL PROTECTION
A2. Crystal growth
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Title: Growth interface study of CdTeSe crystals grown by the THM technique

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