DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Resistivity of manganese doped GaN grown by near equilibrium ammonothermal (NEAT) method

Journal Article · · Journal of Crystal Growth

Not Available

Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Grant/Contract Number:
AR0001562
OSTI ID:
1992971
Journal Information:
Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Journal Issue: C Vol. 621; ISSN 0022-0248
Publisher:
ElsevierCopyright Statement
Country of Publication:
Netherlands
Language:
English

References (30)

Ammonothermal Growth of GaN on an over-1-inch Seed Crystal journal December 2005
Growth of Prismatic GaN Single Crystals with High Transparency on Small GaN Seed Crystals by Ca–Li-Added Na Flux Method journal February 2012
A GaN bulk crystal with improved structural quality grown by the ammonothermal method journal July 2007
GaN crystallization by the high-pressure solution growth method on HVPE bulk seed journal August 2008
Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN journal October 2020
Ammonothermal growth of GaN on a self-nucleated GaN seed crystal journal October 2014
Improved growth rates and purity of basic ammonothermal GaN journal October 2014
Free-standing carbon-doped semi-insulating GaN wafer grown by HVPE journal November 2021
Properties of Fe-doped semi-insulating GaN substrates for high-frequency device fabrication journal July 2007
Crystal growth of gallium nitride in supercritical ammonia journal January 2001
Growth of bulk GaN crystals journal August 2020
Morphology and characterization of GaN single crystals grown in a Na flux journal March 1998
Ammonothermal synthesis of GaN doped with transition metal ions (Mn, Fe, Cr) journal May 2008
On GaN Crystallization by Ammonothermal Method journal October 1996
Excellent crystallinity of truly bulk ammonothermal GaN journal August 2008
Effect of carbon additive on increases in the growth rate of 2in GaN single crystals in the Na flux method journal August 2008
Ammonothermal Recrystallization of Gallium Nitride with Acidic Mineralizers journal January 2002
Assessment of Li–Ga–N ternary system and GaN single crystal growth journal March 2004
Enhancement of lateral growth of the GaN crystal with extremely low dislocation density during the Na-flux growth on a point seed journal June 2017
Ammonothermal synthesis of aluminum nitride journal July 1990
Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia journal January 2004
Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method journal April 2019
Ammonothermal growth of high-quality GaN crystals on HVPE template seeds journal March 2011
Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method journal March 2022
Growth of bulk GaN single crystals by the pressure-controlled solution growth method journal July 2001
Development of GaN wafers for solid-state lighting via the ammonothermal method journal July 2012
Optical properties of the deep Mn acceptor in GaN:Mn journal March 2002
Growth of Bulk GaN Crystals by the Basic Ammonothermal Method journal September 2007
GaN single crystal growth using high-purity Na as a flux journal July 2002
Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives journal September 2018