Vertical nanoscale strain-induced electronic localization in epitaxial La2/3Sr1/3MnO3 films with ZrO2 nanopillar inclusions

Gao, Yuze; Roldan, Manuel A.; Qiao, Liang; Mandrus, David; Shen, Xuechu; Chisholm, Matthew F.; Singh, David J.; Cao, Guixin

doi:10.1186/s40580-023-00382-6

Title: Vertical nanoscale strain-induced electronic localization in epitaxial La2/3Sr1/3MnO3 films with ZrO2 nanopillar inclusions

Journal Article · 27 July 2023 · Nano Convergence

DOI: https://doi.org/10.1186/s40580-023-00382-6 · OSTI ID:1992948

Gao, Yuze; Roldan, Manuel A.; Qiao, Liang; Mandrus, David; Shen, Xuechu; Chisholm, Matthew F.; Singh, David J.;

Abstract Unusual electrical transport properties associated with weak or strong localization are sometimes found in disordered electronic materials. Here, we report experimental observation of a crossover of electronic behavior from weak localization to enhanced weak localization due to the spatial influence of disorder induced by ZrO ₂ nanopillars in (La _2/3 Sr _1/3 MnO ₃ ) _{1− x} :(ZrO ₂ ) _x ( x = 0, 0.2, and 0.3) nanocomposite films. The spatial strain regions, identified by scanning transmission electron microscopy and high-resolution x-ray diffraction, induce a coexistence of two-dimentional (2D) and three-dimentional (3D) localization and switches to typical 2D localization with increasing density of ZrO ₂ pillars due to length scale confinement, which interestingly accords with enhancing vertically interfacial strain. Based on the excellent agreement of our experimental results with one-parameter scaling theory of localization, the enhanced weak localization exists in metal range close to the fixed point. These films provide a tunable experimental model for studying localization in particular the transition regime by appropriate choice of the second epitaxial phase. Graphical Abstract

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Research Organization:: Massachusetts Institute of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: Department of Science and Technology of Zhejiang Province; Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials; USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: SC0001299

OSTI ID:: 1992948

Journal Information:: Nano Convergence, Journal Name: Nano Convergence Journal Issue: 1 Vol. 10; ISSN 2196-5404

Publisher:: Springer Science + Business MediaCopyright Statement

Country of Publication:: Germany

Language:: English

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