Spin-exchange carrier multiplication in manganese-doped colloidal quantum dots

Jin, Ho; Livache, Clément; Kim, Whi Dong; Diroll, Benjamin T.; Schaller, Richard D.; Klimov, Victor I.

doi:10.1038/s41563-023-01598-x

Title: Spin-exchange carrier multiplication in manganese-doped colloidal quantum dots

Journal Article · 13 July 2023 · Nature Materials

DOI: https://doi.org/10.1038/s41563-023-01598-x · OSTI ID:1989518

; Livache, Clément; Kim, Whi Dong; Diroll, Benjamin T.;

;

Abstract Carrier multiplication is a process whereby a kinetic energy of a carrier relaxes via generation of additional electron–hole pairs (excitons). This effect has been extensively studied in the context of advanced photoconversion as it could boost the yield of generated excitons. Carrier multiplication is driven by carrier–carrier interactions that lead to excitation of a valence-band electron to the conduction band. Normally, the rate of phonon-assisted relaxation exceeds that of Coulombic collisions, which limits the carrier multiplication yield. Here we show that this limitation can be overcome by exploiting not ‘direct’ but ‘spin-exchange’ Coulomb interactions in manganese-doped core/shell PbSe/CdSe quantum dots. In these structures, carrier multiplication occurs via two spin-exchange steps. First, an exciton generated in the CdSe shell is rapidly transferred to a Mn dopant. Then, the excited Mn ion undergoes spin-flip relaxation via a spin-conserving pathway, which creates two excitons in the PbSe core. Due to the extremely fast, subpicosecond timescales of spin-exchange interactions, the Mn-doped quantum dots exhibit an up-to-threefold enhancement of the multiexciton yield versus the undoped samples, which points towards the considerable potential of spin-exchange carrier multiplication in advanced photoconversion.

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Sponsoring Organization:: USDOE

OSTI ID:: 1989518

Journal Information:: Nature Materials, Journal Name: Nature Materials Journal Issue: 8 Vol. 22; ISSN 1476-1122

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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