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Title: Thin‐Film Organic Heteroepitaxy

Journal Article · · Advanced Materials
 [1];  [1];  [2];  [3];  [1];  [1];  [4];  [5];  [5];  [6];  [4];  [3];  [2];  [1]; ORCiD logo [7]
  1. Department of Electrical and Computer Engineering Princeton University Princeton NJ 08544 USA
  2. Department of Physics and Astronomy and Laboratory for Surface Modification Rutgers University Piscataway NJ 08854 USA
  3. Department of Chemistry and Center for Applied Energy Research University of Kentucky Lexington KY 40506 USA
  4. Department of Chemical and Biological Engineering Princeton University Princeton NJ 08544 USA
  5. Department of Chemistry Princeton University Princeton NJ 08544 USA
  6. Department of Chemistry University of Puerto Rico‐Río Piedras Campus San Juan PR 00925 USA
  7. Department of Electrical and Computer Engineering Princeton University Princeton NJ 08544 USA, Andlinger Center for Energy and the Environment Princeton University Princeton NJ 08544 USA

Abstract Incorporating crystalline organic semiconductors into electronic devices requires understanding of heteroepitaxy given the ubiquity of heterojunctions in these devices. However, while rules for commensurate epitaxy of covalent or ionic inorganic material systems are known to be dictated by lattice matching constraints, rules for heteroepitaxy of molecular systems are still being written. Here, it is found that lattice matching alone is insufficient to achieve heteroepitaxy in molecular systems, owing to weak intermolecular forces that describe molecular crystals. It is found that, in addition, the lattice matched plane also must be the lowest energy surface of the adcrystal to achieve one‐to‐one commensurate molecular heteroepitaxy over a large area. Ultraviolet photoelectron spectroscopy demonstrates the lattice matched interface to be of higher electronic quality than a disordered interface of the same materials.

Research Organization:
Princeton University, NJ (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0012458
OSTI ID:
1989501
Journal Information:
Advanced Materials, Journal Name: Advanced Materials Journal Issue: 35 Vol. 35; ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
Germany
Language:
English

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