Investigation of AlGaN-Delta–GaN-Based UV Photodiodes in a Metal–Semiconductor–Metal Configuration for Efficient and Fast Solar Blind UV Sensing

Nwabunwanne, Solumtochukwu F.; Melanson, Bryan; Zhang, Jing; Donaldson, William R.

doi:10.1109/jqe.2023.3274705

Title: Investigation of AlGaN-Delta–GaN-Based UV Photodiodes in a Metal–Semiconductor–Metal Configuration for Efficient and Fast Solar Blind UV Sensing

Journal Article · 09 May 2023 · IEEE Journal of Quantum Electronics

DOI: https://doi.org/10.1109/jqe.2023.3274705 · OSTI ID:1985252

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University of Rochester, NY (United States); Laboratory for Laser Energetics, University of Rochester
Rochester Institute of Technology, NY (United States)
University of Rochester, NY (United States)

Metal–semiconductor–metal (MSM) configured UV photodiodes (PD’s) were designed and fabricated on an AlGaN/GaN–based substrate for efficient and ultrafast UV detection. The purpose was to investigate the feasibility of obtaining efficient and ultrafast temporal response from these devices in the UV given the challenges associated with the formation of Schottky contacts on laterally oriented AlGaN/GaN thin films. Two sets of devices were implemented using Pt and Au as metal contacts with 5-µm finger width, 5-µm finger spacing, and a 50-µm x 50-µm active area. Spectral and voltage bias studies were done to establish the spectral profile and the effect of bias voltage on the responsivity of the detectors at 265 nm. Here, the best vertical MSM PD’s produced 0.6-A/W responsivity under 10-V bias voltage at 265 nm. Peak spectral responsivities were recorded as 1.35 A/W and 1.25 A/W at 240 nm for Pt and Au PD’s, respectively.

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Research Organization:: University of Rochester, NY (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003856

OSTI ID:: 1985252

Journal Information:: IEEE Journal of Quantum Electronics, Journal Name: IEEE Journal of Quantum Electronics Journal Issue: 4 Vol. 59; ISSN 0018-9197

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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Related Subjects

42 ENGINEERING
AlGaN
Au
GaN
MSM
PD
PIN
Pt
UV
efficient
photodetector
spectral responsivity
ultrafast
vertically oriented

Title: Investigation of AlGaN-Delta–GaN-Based UV Photodiodes in a Metal–Semiconductor–Metal Configuration for Efficient and Fast Solar Blind UV Sensing

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