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Title: Electronic band structure and magnetism of CoFeV0.5Mn0.5Si

Journal Article · · AIP Advances
DOI: https://doi.org/10.1063/9.0000252 · OSTI ID:1982393

Half-metallic Heusler alloys have attracted significant attention due to their potential application in spin-transport-based devices. We have synthesized one such alloy, CoFeV0.5Mn0.5Si, using arc melting and high-vacuum annealing at 600 °C for 24 hours. First principles calculation indicates that CoFeV0.5Mn0.5Si shows a nearly half-metallic band structure with a degree of spin polarization of about 93%. In addition, this value can be enhanced by the application of tensile strain. The room temperature x-ray diffraction patterns are indexed with the cubic crystal structure without secondary phases. The annealed sample shows ferromagnetic order with the Curie temperature well above room temperature ( Tc = 657 K) and a saturation magnetization of about 92 emu/g. Our results indicate that CoFeV0.5Mn0.5Si has a potential for room temperature spin-transport-based devices.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN); South Dakota State University, Brookings, SD (United States); University of Northern Iowa, Cedar Falls, IA (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOE Office of Science (SC)
Grant/Contract Number:
SC0012704
OSTI ID:
1982393
Journal Information:
AIP Advances, Journal Name: AIP Advances Journal Issue: 3 Vol. 12; ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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