Er-doped anatase TiO2 thin films on LaAlO3 (001) for quantum interconnects (QuICs)

Shin, Kidae; Gray, Isaiah; Marcaud, Guillaume; Horvath, Sebastian P.; Walker, Frederick J.; Thompson, Jeff D.; Ahn, Charles H.

doi:10.1063/5.0107071

Title: Er-doped anatase TiO₂ thin films on LaAlO₃ (001) for quantum interconnects (QuICs)

Journal Article · 21 August 2022 · Applied Physics Letters

DOI: https://doi.org/10.1063/5.0107071 · OSTI ID:1982392

^[1]; Gray, Isaiah ^[2]; Marcaud, Guillaume ^[1]; Horvath, Sebastian P. ^[2];

^[1]; Thompson, Jeff D. ^[2];

^[1]

Yale University, New Haven, CT (United States)
Princeton University, NJ (United States)

Rare-earth ions (REIs) doped into solid-state crystal hosts offer an attractive platform for realizing quantum interconnects that can function as quantum memories and quantum repeaters. The 4f valence electrons of REIs are shielded by 5s and 5p electrons and undergo highly coherent transitions even when embedded in host crystals. In particular, Er³⁺ has an optical transition in the telecom band that is suitable for low-loss communication. Recently, REIs in thin film systems have gained interest due to potential advantages in providing a flexible host crystal environment, enabling scalable on-chip integration with other quantum devices. Here, we investigate the structural and optical properties of Er-doped anatase TiO₂ thin films on LaAlO₃ (001) substrates. By choosing a system with minimal lattice mismatch and adjusting Er-dopant concentration, we achieve optical inhomogeneous linewidths of 5 GHz at 4.5 K. Furthermore, we show that 9 nm-thick buffer and capping layers can reduce the linewidth by more than 40%, suggesting a pathway to further narrowing linewidths in this system. We also identify that Er³⁺ ions mainly incorporate into substitutional Ti⁴⁺ sites with non-polar D_2d symmetry, which makes Er dopants insensitive to the first order to local electric fields from impurities and is desirable for coherence properties of Er³⁺ spins.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: SC0012704

OSTI ID:: 1982392

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 121; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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42 ENGINEERING
Doping
Ions and properties
Photoluminescence spectroscopy
Physics
Quantum information
Thin films
Transition metal oxides
X-ray diffraction

Title: Er-doped anatase TiO2 thin films on LaAlO3 (001) for quantum interconnects (QuICs)

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Title: Er-doped anatase TiO₂ thin films on LaAlO₃ (001) for quantum interconnects (QuICs)