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Title: Fast Near-Infrared Photodetection Using III–V Colloidal Quantum Dots

Journal Article · · Advanced Materials
ORCiD logo [1];  [2];  [2];  [2];  [3];  [2];  [2];  [2];  [2];  [2];  [4];  [2];  [2];  [2];  [2];  [2];  [4];  [2];  [2];  [2] more »;  [5]; ORCiD logo [2] « less
  1. Univ. of Toronto, ON (Canada); Nanjing University of Posts and Telecommunications (China)
  2. Univ. of Toronto, ON (Canada)
  3. Univ. of Toronto, ON (Canada); Dongguk Univ., Seoul (Korea, Republic of)
  4. National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
  5. Univ. of Toronto, ON (Canada); Barcelona Institute of Science and Technology (Spain)
+ Show Author Affiliations

Colloidal quantum dots (CQDs) are promising materials for infrared (IR) light detection due to their tunable bandgap and their solution processing; however, to date, the time response of CQD IR photodiodes is inferior to that provided by Si and InGaAs. It is reasoned that the high permittivity of II–VI CQDs leads to slow charge extraction due to screening and capacitance, whereas III–Vs—if their surface chemistry can be mastered—offer a low permittivity and thus increase potential for high-speed operation. In initial studies, it is found that the covalent character in indium arsenide (InAs) leads to imbalanced charge transport, the result of unpassivated surfaces, and uncontrolled heavy doping. Surface management using amphoteric ligand coordination is reported, and it is found that the approach addresses simultaneously the In and As surface dangling bonds. The new InAs CQD solids combine high mobility (0.04 cm2 V-1 s-1) with a 4× reduction in permittivity compared to PbS CQDs. Finally, the resulting photodiodes achieve a response time faster than 2 ns—the fastest photodiode among previously reported CQD photodiodes—combined with an external quantum efficiency (EQE) of 30% at 940 nm.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
Grant/Contract Number:
SC0012704
OSTI ID:
1981356
Journal Information:
Advanced Materials, Journal Name: Advanced Materials Journal Issue: 33 Vol. 34; ISSN 0935-9648
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English

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36 MATERIALS SCIENCE
fast photodetectors
heavy-metal free
near-infrared
photodiodes
quantum dots