Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon
Achieving high quantum efficiency in long-wavelength LEDs has posed a significant challenge to the solid-state lighting and display industries. In this article, we use V-defect engineering as a technique to achieve higher efficiencies in red InGaN LEDs on (111) Si through lateral injection. We investigate the effects of superlattice structure on the V-defect distribution, the electroluminescence properties, and the external quantum efficiency. Increasing the relative thickness of In in the InGaN/GaN superlattice and the total superlattice thickness correlate with a reduction of active region defects and increased external quantum efficiencies. The highest measured on-chip EQE was 0.15% and based on Monte-Carlo ray tracing simulations for light extraction we project this would correspond to a flip-chip EQE of ~2.5%.
- Research Organization:
- Univ. of California, Santa Barbara, CA (United States); University of California, Santa Barbara, CA (United States)
- Sponsoring Organization:
- Applied Materials, Inc.; National Science Foundation (NSF); USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- Grant/Contract Number:
- EE0009691
- OSTI ID:
- 1981119
- Journal Information:
- Crystals, Journal Name: Crystals Journal Issue: 9 Vol. 12; ISSN 2073-4352
- Publisher:
- MDPICopyright Statement
- Country of Publication:
- United States
- Language:
- English
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