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Title: Absolute measurement of vacuum ultraviolet photon flux in an inductively coupled plasma using a Au thin film

Journal Article · · Journal of Vacuum Science and Technology B
DOI: https://doi.org/10.1116/6.0001709 · OSTI ID:1980708
 [1];  [2]; ORCiD logo [3]; ORCiD logo [3]
  1. Univ. of Houston, TX (United States). Plasma Processing Laboratory; Univ. of Michigan, Ann Arbor, MI (United States)
  2. Univ. of Houston, TX (United States)
  3. Univ. of Houston, TX (United States). Plasma Processing Laboratory

A new method for absolute measurement of the vacuum ultraviolet (VUV) photon flux at the edge of a plasma is described. The light produced by the plasma was allowed to strike a negatively biased, gold-coated copper substrate remote from the plasma. The resulting photoelectron emission current was measured, and the absolute photon flux was then found from the known photoelectron yield of Au. The method was used to quantify the amount of VUV light produced by an Ar/He inductively coupled plasma (ICP). Strong emissions at 104.82 and 106.67 nm, corresponding to the 1s2 and 1s4 resonant states of Ar, were observed. The maximum, integrated VUV photon flux measured at the remote location was 3.2 × 1013 photons/cm2 s. This was estimated to correspond to a flux of 5 × 1015 photons/cm2 s at the edge of the ICP, in the range of reported values under similar conditions.

Research Organization:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Fusion Energy Sciences (FES); National Science Foundation (NSF)
Grant/Contract Number:
SC0001939
OSTI ID:
1980708
Journal Information:
Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Journal Issue: 2 Vol. 40; ISSN 2166-2746
Publisher:
American Vacuum Society / AIPCopyright Statement
Country of Publication:
United States
Language:
English

References (36)

Low energy photodesorption from Si(100) exposed to CO, CO2, O2, NO and SO2 journal January 1987
Low temperature photo-assisted oxidation of silicon journal January 1992
Overview on Surface Microstructuring by Photodesorption Etching of Chlorinated Silicon journal March 1997
Experimental Investigation of Photoemission from Satellite Surface Materials journal April 1972
Electron Impact Cross Sections for Argon journal June 1972
Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process journal April 2008
Synergistic effects of vacuum ultraviolet radiation, ion bombardment, and heating in 193nm photoresist roughening and degradation journal April 2008
Absolute vacuum ultraviolet flux in inductively coupled plasmas and chemical modifications of 193 nm photoresist journal April 2009
Prediction of UV spectra and UV-radiation damage in actual plasma etching processes using on-wafer monitoring technique journal February 2010
Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas journal May 2014
Vacuum ultraviolet radiation emitted by microwave driven argon plasmas journal April 2017
Plasma electron temperatures and electron energy distributions measured by trace rare gases optical emission spectroscopy journal September 2004
Atmospheric-pressure plasma sources for biomedical applications journal June 2012
Controlling VUV photon fluxes in low-pressure inductively coupled plasmas journal May 2015
In situmeasurement of VUV/UV radiation from low-pressure microwave-produced plasma in Ar/O2gas mixtures journal July 2017
Optical Properties of Noble Metals. II. journal April 1965
Photoemission Studies of the Noble Metals. II. Gold journal January 1970
Photochemical etching of silicon: The influence of photogenerated charge carriers journal May 1989
Absolute intensities of the vacuum ultraviolet spectra in oxide etch plasma processing discharges
  • Woodworth, J. R.; Riley, M. E.; Amatucci, V. A.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 1 https://doi.org/10.1116/1.1335685
journal January 2001
Damage mechanism in low-dielectric (low-k) films during plasma processes
  • Jinnai, Butsurin; Nozawa, Toshihisa; Samukawa, Seiji
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 6 https://doi.org/10.1116/1.3010721
journal November 2008
Surprising importance of photo-assisted etching of silicon in chlorine-containing plasmas
  • Shin, Hyungjoo; Zhu, Weiye; Donnelly, Vincent M.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 2 https://doi.org/10.1116/1.3681285
journal March 2012
Ion energy distributions, electron temperatures, and electron densities in Ar, Kr, and Xe pulsed discharges
  • Shin, Hyungjoo; Zhu, Weiye; Economou, Demetre J.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 3 https://doi.org/10.1116/1.4705515
journal May 2012
Plasma etching: Yesterday, today, and tomorrow journal September 2013
Comparison of surface vacuum ultraviolet emissions with resonance level number densities. I. Argon plasmas
  • Boffard, John B.; Lin, Chun C.; Culver, Cody
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2 https://doi.org/10.1116/1.4859376
journal March 2014
Transfer of nanopantography-defined patterns using highly selective plasma etching
  • Tian, Siyuan; Donnelly, Vincent M.; Economou, Demetre J.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 33, Issue 3 https://doi.org/10.1116/1.4918716
journal May 2015
Insights into the mechanism of in-plasma photo-assisted etching using optical emission spectroscopy
  • Sridhar, Shyam; Liu, Lei; Hirsch, Emilia W.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 6 https://doi.org/10.1116/1.4964641
journal November 2016
Evidence for anti-synergism between ion-assisted etching and in-plasma photoassisted etching of silicon in a high-density chlorine plasma journal March 2020
Photodesorption studies of CO2 from an oxygen‐saturated silicon(100) surface journal January 1983
Reaction of silicon with chlorine and ultraviolet laser induced chemical etching mechanisms journal September 1989
Effects of O2 addition on in-plasma photo-assisted etching of Si with chlorine journal September 2020
In-plasma photo-assisted etching of Si with chlorine aided by an external vacuum ultraviolet source journal March 2022
Radiation Damage in SiO2/Si Induced by VUV Photons journal October 1989
Vacuum-Ultra-Violet and Ozone Induced Oxidation of Silicon and Silicon-Germanium journal December 1993
Radiation Damage of SiO2 Surface Induced by Vacuum Ultraviolet Photons of High-Density Plasma journal April 1994
On-Wafer Monitoring of Vacuum-Ultraviolet Radiation Damage in High-Density Plasma Processes journal December 2001
Metal Photocathodes as Secondary Standards for Absolute Intensity Measurements in the Vacuum Ultraviolet* journal January 1966