Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition

Messina, Daniel C.; Eller, Brianna S.; Scowen, Paul A.; Nemanich, Robert J.

doi:10.1116/6.0001468

Title: Comparison of AlF₃ thin films grown by thermal and plasma enhanced atomic layer deposition

Journal Article · 20 December 2021 · Journal of Vacuum Science and Technology A

DOI: https://doi.org/10.1116/6.0001468 · OSTI ID:1980705

^[1]; Eller, Brianna S. ^[2]; Scowen, Paul A. ^[2];

^[2]

Arizona State Univ., Tempe, AZ (United States); Arizona State Univ., Tempe, AZ (United States)
Arizona State Univ., Tempe, AZ (United States)

Films of aluminum fluoride (AlF₃) deposited by thermal and plasma enhanced atomic layer deposition (PEALD) have been compared using in situ multiwavelength ellipsometry (MWE) and monochromatic x-ray photoelectron spectroscopy (XPS). The AlF₃ films were grown using cyclic exposures of trimethylaluminum, hydrogen fluoride, and H radicals from a remote H₂ inductively coupled plasma. Films were characterized in situ using MWE and XPS for growth rate, film composition, and impurity incorporation. The MWE showed a growth rate of 1.1 and 0.7 Å per cycle, at 100 °C, for thermal and plasma enhanced ALD AlF₃ films, respectively. Carbon incorporation was below the XPS detection limit. The plasma enhanced ALD AlF₃ film showed the presence of Al-Al chemical states, in the Al 2p scans, suggesting the presence of Al-rich clusters with a concentration of 14%. The Al-rich clusters are thought to originate during the hydrogen plasma step of the PEALD process. Finally, the Al-rich clusters were not detected in thermal ALD AlF₃ films using the same precursors and substrate temperature.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States); Energy Frontier Research Centers (EFRC) (United States). Ultra Materials for a Resilient, Smart Electricity Grid (ULTRA)

Sponsoring Organization:: National Aeronautics and Space Administration (NASA); National Science Foundation (NSF); USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: SC0021230

OSTI ID:: 1980705

Journal Information:: Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 1 Vol. 40; ISSN 0734-2101

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Comparison of AlF₃ thin films grown by thermal and plasma enhanced atomic layer deposition