Growth, characterization, and Chern insulator state in MnBi2⁢Te4 via the chemical vapor transport method

Hu, Chaowei; Gao, Anyuan; Berggren, Bryan Stephen; Li, Hong; Kurleto, Rafał; Narayan, Dushyant; Zeljkovic, Ilija; Dessau, Dan; Xu, Suyang; Ni, Ni

doi:10.1103/physrevmaterials.5.124206

Title: Growth, characterization, and Chern insulator state in MnBi_2⁢Te₄ via the chemical vapor transport method

Journal Article · 15 December 2021 · Physical Review Materials

DOI: https://doi.org/10.1103/physrevmaterials.5.124206 · OSTI ID:1980337

Hu, Chaowei ^[1];

^[2];

^[3]; Li, Hong ^[4];

^[3];

^[3]; Zeljkovic, Ilija ^[4]; Dessau, Dan ^[3]; Xu, Suyang ^[2];

^[1]

Univ. of California, Los Angeles, CA (United States)
Harvard Univ., Cambridge, MA (United States)
Univ. of Colorado, Boulder, CO (United States)
Boston College, Chestnut Hill, MA (United States)

As the first intrinsic antiferromagnetic topological insulator, MnBi₂ Te₄ has provided a platform to investigate the interplay of band topology and magnetism as well as the emergent phenomena arising from such an interplay. Here we report the chemical-vapor-transport (CVT) growth and characterization of MnBi₂ Te₄, as well as the observation of the field-induced quantized Hall conductance in 6-layer devices. Through comparative studies between our CVT-grown and flux-grown MnBi₂ Te₄ via magnetic, transport, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy measurements, we find that CVT-grown MnBi₂ Te₄ is marked with higher Mn occupancy on the Mn site, slightly higher Mn_Bi antisites, smaller carrier concentration, and a Fermi level closer to the Dirac point. Furthermore, a 6-layer device made from the CVT-grown sample shows by far the highest mobility of 2500 cm² V s in MnBi₂ Te₄ devices with the quantized Hall conductance appearing at 1.8 K and 8 T. Furthermore, our study provides a route to obtain high-quality single crystals of MnBi₂ Te₄ that are promising to make superior devices and realize emergent phenomena, such as the layer Hall effect and quantized anomalous Hall effect, etc.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for the Advancement of Topological Semimetals (CATS); Univ. of Colorado, Boulder, CO (United States); University of California, Los Angeles, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: AC02-05CH11231; AC02-07CH11358; AC02-76SF00515; FG02-03ER46066; SC0021117

OSTI ID:: 1980337

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 12 Vol. 5; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Growth, characterization, and Chern insulator state in MnBi2⁢Te4 via the chemical vapor transport method

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