High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors

Randle, M. D.; Lipatov, A.; Datta, A.; Kumar, A.; Mansaray, I.; Sinitskii, A.; Singisetti, U.; Han, J. E.; Bird, J. P.

doi:10.1063/5.0083166

Title: High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors

Journal Article · 14 February 2022 · Applied Physics Letters

DOI: https://doi.org/10.1063/5.0083166 · OSTI ID:1979038

^[1];

^[2]; Datta, A. ^[3];

^[3]; Mansaray, I. ^[3];

^[4];

^[3]; Han, J. E. ^[3];

^[3]

State University of New York at Buffalo, NY (United States); The State Univ. of New York, Buffalo, NY (United States)
South Dakota School of Mines and Technology, Rapid City, SD (United States)
State University of New York at Buffalo, NY (United States)
University of Nebraska, Lincoln, NE (United States)

We investigate the behavior of the metal-insulator transition (MIT) in TiS₃ nanowire field-effect transistors, in the strongly nonequilibrium limit that has, thus far, largely been neglected. Under high electric fields within the TiS₃ channel (≤115 kV/cm), we observe the emergence of a critical fixed point, separating insulating and metallic regions in the transfer curves of the device. The critical gate voltage that defines this fixed point evolves systematically with the drain bias (field), allowing us to map out a phase diagram that identifies the conditions for metallicity or for insulating behavior. Dependent upon the choice of the gate voltage used to tune the carrier concentration in the nanowire, the existence of the field-induced MIT allows the TiS₃ to be either insulating or metallic over an extensive range of temperature. The possible connection of this strongly nonequilibrium state to some form of charge density wave is discussed.

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Research Organization:: State University of New York (SUNY), Albany, NY (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: FG02-04ER46180

OSTI ID:: 1979038

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 120; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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