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Title: Electronic properties of correlated kagomé metals AV3Sb5 (A = K, Rb, and Cs): A perspective

Journal Article · · Journal of Applied Physics
DOI: https://doi.org/10.1063/5.0079593 · OSTI ID:1979024
ORCiD logo [1]; ORCiD logo [2]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Massachusetts Inst. of Technology, Cambridge, MA (United States)
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Following the discovery of a new family of kagomé prototypical materials with structure AV3Sb5 (A=K, Rb, and Cs), there has been a heightened interest in studying the correlation-driven electronic phenomena in these kagomé lattice systems. The study of these materials has gone beyond magneto-transport measurements to reveal exciting features such as Dirac bands, anomalous Hall effect, bulk superconductivity with Tc~0.9–2.5K, and the observation of charge density wave instabilities, suggesting an intertwining of topological physics and new quantum orders. Moreover, very recent works on numerous types of experiments have appeared further examining the unconventional superconductivity and the exotic electronic states found within these kagomé materials. Theories on the strong interactions that play a role in these systems have been proposed to shed light on the nature of these topological charge density waves. In this brief review, we summarize these recent experimental findings and theoretical proposals and envision the materials as new platforms to study the interplay between topological physics and strongly correlated electronic systems.

Research Organization:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0020148
OSTI ID:
1979024
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 131; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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