Selective area epitaxy of GaAs films using patterned graphene on Ge

Lim, Zheng Hui; Manzo, Sebastian; Strohbeen, Patrick J.; Saraswat, Vivek; Arnold, Michael S.; Kawasaki, Jason K.

doi:10.1063/5.0078774

Title: Selective area epitaxy of GaAs films using patterned graphene on Ge

Journal Article · 03 February 2022 · Applied Physics Letters

DOI: https://doi.org/10.1063/5.0078774 · OSTI ID:1979014

Lim, Zheng Hui ^[1]; Manzo, Sebastian ^[2]; Strohbeen, Patrick J. ^[2];

^[2];

^[2]

University of Wisconsin, Madison, WI (United States); Univ. of Wisconsin, Madison, WI (United States)
University of Wisconsin, Madison, WI (United States)

We demonstrate selective area epitaxy of GaAs films using patterned graphene masks on a Ge (001) substrate. GaAs selectively grows on exposed regions of the Ge substrate for graphene stripe widths of 10 μm. The selectivity is highly dependent on the growth temperature and annealing time, which we explain in terms of temperature dependent sticking coefficients and surface diffusion. The high nucleation selectivity over several micrometers sets constraints on experimental realizations of remote epitaxy.

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Research Organization:: University of Wisconsin, Madison, WI (United States)

Sponsoring Organization:: Defense Advanced Research Projects Administration (DARPA); National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0016007

OSTI ID:: 1979014

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 120; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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71 CLASSICAL AND QUANTUM MECHANICS
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Title: Selective area epitaxy of GaAs films using patterned graphene on Ge

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