A trapping tolerant drain current based temperature measurement of β -Ga 2 O 3 MOSFETs

Zheng, Xiang; Moule, Taylor; Pomeroy, James W.; Higashiwaki, Masataka; Kuball, Martin

doi:10.1063/5.0069655

Title: A trapping tolerant drain current based temperature measurement of β -Ga ₂ O ₃ MOSFETs

Journal Article · 14 February 2022 · Applied Physics Letters

DOI: https://doi.org/10.1063/5.0069655 · OSTI ID:1978973

^[1]; Moule, Taylor ^[2];

^[2];

^[3];

^[2]

University of Bristol (United Kingdom); Univ. of Bristol (United Kingdom)
University of Bristol (United Kingdom)
National Institute of Information and Communications Technology, Tokyo (Japan)

The drain current temperature dependence is an efficient way to determine the channel temperature in semiconductor devices; however, it has been challenging to use due to the potential interference of trapping effects. A trapping tolerant method is proposed, illustrated here for Ga₂O₃ MOSFETs, making in situ temperature measurements possible, allowing a thermal resistance of 59 K∙mm/W to be measured in Ga₂O₃ MOSFETs. However, neglecting the effect of trapping causes an error of ~15% in the channel temperature measured using the drain current. 3D simulations show that the measured channel temperature is the average temperature value between source and drain contact.

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Research Organization:: Arizona State University, Tempe, AZ (United States); University of Bristol (United Kingdom)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Royal Academy of Engineering

Grant/Contract Number:: SC0021230

OSTI ID:: 1978973

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 120; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (24)

Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy Sasaki, Kohei; Higashiwaki, Masataka; Kuramata, Akito Journal of Crystal Growth, Vol. 392 https://doi.org/10.1016/j.jcrysgro.2014.02.002	journal	April 2014
Investigations on junction temperature estimation based on junction voltage measurements Khatir, Z.; Dupont, L.; Ibrahim, A. Microelectronics Reliability, Vol. 50, Issue 9-11 https://doi.org/10.1016/j.microrel.2010.07.102	journal	September 2010
Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy Zhao, Miao; Liu, Xinyu; Zheng, Yingkui Optics Communications, Vol. 291 https://doi.org/10.1016/j.optcom.2012.10.077	journal	March 2013
Deep-ultraviolet transparent conductive β-Ga2O3 thin films Orita, Masahiro; Ohta, Hiromichi; Hirano, Masahiro Applied Physics Letters, Vol. 77, Issue 25 https://doi.org/10.1063/1.1330559	journal	December 2000
Electrical conductivity and lattice expansion of β-Ga2O3 below room temperature Víllora, Encarnación G.; Shimamura, Kiyoshi; Ujiie, Takekazu Applied Physics Letters, Vol. 92, Issue 20 https://doi.org/10.1063/1.2910770	journal	May 2008
Gallium oxide (Ga ₂ O ₃ ) metal-semiconductor field-effect transistors on single-crystal β-Ga ₂ O ₃ (010) substrates Higashiwaki, Masataka; Sasaki, Kohei; Kuramata, Akito Applied Physics Letters, Vol. 100, Issue 1 https://doi.org/10.1063/1.3674287	journal	January 2012
Anisotropic thermal conductivity in single crystal β-gallium oxide Guo, Zhi; Verma, Amit; Wu, Xufei Applied Physics Letters, Vol. 106, Issue 11 https://doi.org/10.1063/1.4916078	journal	March 2015
Lattice thermal conductivity in β-Ga2O3 from first principles Santia, Marco D.; Tandon, Nandan; Albrecht, J. D. Applied Physics Letters, Vol. 107, Issue 4 https://doi.org/10.1063/1.4927742	journal	July 2015
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga ₂ O ₃ (001) Schottky barrier diodes fabricated on n ^– –Ga ₂ O ₃ drift layers grown by halide vapor phase epitaxy Higashiwaki, Masataka; Konishi, Keita; Sasaki, Kohei Applied Physics Letters, Vol. 108, Issue 13 https://doi.org/10.1063/1.4945267	journal	March 2016
Characterization of channel temperature in Ga ₂ O ₃ metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling Wong, Man Hoi; Morikawa, Yoji; Sasaki, Kohei Applied Physics Letters, Vol. 109, Issue 19 https://doi.org/10.1063/1.4966999	journal	November 2016
Anisotropic thermal conductivity of β-Ga ₂ O ₃ at elevated temperatures: Effect of Sn and Fe dopants Slomski, M.; Blumenschein, N.; Paskov, P. P. Journal of Applied Physics, Vol. 121, Issue 23 https://doi.org/10.1063/1.4986478	journal	June 2017
A review of Ga ₂ O ₃ materials, processing, and devices Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H. Applied Physics Reviews, Vol. 5, Issue 1 https://doi.org/10.1063/1.5006941	journal	March 2018
$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates Sasaki, Kohei; Higashiwaki, Masataka; Kuramata, Akito IEEE Electron Device Letters, Vol. 34, Issue 4 https://doi.org/10.1109/LED.2013.2244057	journal	April 2013
Field-Plated Ga ₂ O ₃ MOSFETs With a Breakdown Voltage of Over 750 V Wong, Man Hoi; Sasaki, Kohei; Kuramata, Akito IEEE Electron Device Letters, Vol. 37, Issue 2 https://doi.org/10.1109/LED.2015.2512279	journal	February 2016
Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs Martin-Horcajo, Sara; Pomeroy, James W.; Lambert, Benoit IEEE Electron Device Letters, Vol. 37, Issue 9 https://doi.org/10.1109/LED.2016.2595400	journal	September 2016
Pulsed Large Signal RF Performance of Field-Plated Ga ₂ O ₃ MOSFETs Singh, Manikant; Casbon, Michael A.; Uren, Michael J. IEEE Electron Device Letters, Vol. 39, Issue 10 https://doi.org/10.1109/LED.2018.2865832	journal	October 2018
Raman Thermography of Peak Channel Temperature in $\beta$ -Ga ² O ³ MOSFETs Pomeroy, J. W.; Middleton, C.; Singh, M. IEEE Electron Device Letters, Vol. 40, Issue 2 https://doi.org/10.1109/LED.2018.2887278	journal	February 2019
Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy Simms, Richard J. T.; Pomeroy, James W.; Uren, Michael J. IEEE Transactions on Electron Devices, Vol. 55, Issue 2 https://doi.org/10.1109/TED.2007.913005	journal	February 2008
Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs Zheng, Xiang; Feng, Shiwei; Zhang, Yamin IEEE Transactions on Electron Devices, Vol. 65, Issue 5 https://doi.org/10.1109/TED.2018.2812798	journal	May 2018
Accurate Measurement of Channel Temperature for AlGaN/GaN HEMTs Wu, Mei; Ma, Xiao-Hua; Yang, Ling IEEE Transactions on Electron Devices, Vol. 65, Issue 11 https://doi.org/10.1109/TED.2018.2868807	journal	November 2018
Self-Heating Characterization of $\beta$ -Ga ₂ O ₃ Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography Blumenschein, Nicholas A.; Moule, Taylor; Dalcanale, Stefano IEEE Transactions on Electron Devices, Vol. 67, Issue 1 https://doi.org/10.1109/TED.2019.2951502	journal	January 2020
In Situ Observation of β-Ga ₂ O ₃ Schottky Diode Failure Under Forward Biasing Condition Islam, Zahabul; Xian, Minghan; Haque, Aman IEEE Transactions on Electron Devices, Vol. 67, Issue 8 https://doi.org/10.1109/TED.2020.3000441	journal	August 2020
Forward bias degradation and thermal simulations of vertical geometry β-Ga ₂ O ₃ Schottky rectifiers Xian, Minghan; Elhassani, Randy; Fares, Chaker Journal of Vacuum Science & Technology B, Vol. 37, Issue 6 https://doi.org/10.1116/1.5127511	journal	November 2019
Defect States Determining Dynamic Trapping-Detrapping in β-Ga ₂ O ₃ Field-Effect Transistors Polyakov, Alexander Y.; Smirnov, Nikolai B.; Shchemerov, Ivan V. ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7 https://doi.org/10.1149/2.0031907jss	journal	January 2019

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Title: A trapping tolerant drain current based temperature measurement of β -Ga 2 O 3 MOSFETs

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Title: A trapping tolerant drain current based temperature measurement of β -Ga ₂ O ₃ MOSFETs