FerroX: A GPU-accelerated, 3D phase-field simulation framework for modeling ferroelectric devices

Kumar, Prabhat; Nonaka, Andrew; Jambunathan, Revathi; Pahwa, Girish; Salahuddin, Sayeef; Yao, Zhi

doi:10.1016/j.cpc.2023.108757

Title: FerroX: A GPU-accelerated, 3D phase-field simulation framework for modeling ferroelectric devices

Journal Article · 31 August 2023 · Computer Physics Communications

DOI: https://doi.org/10.1016/j.cpc.2023.108757 · OSTI ID:1973296

; Nonaka, Andrew; Jambunathan, Revathi; Pahwa, Girish; Salahuddin, Sayeef;

Not Available

View Journal Article

Cite

Export

Save

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1973296

Journal Information:: Computer Physics Communications, Journal Name: Computer Physics Communications Journal Issue: C Vol. 290; ISSN 0010-4655

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

References (38)

Intrinsic Nature of Negative Capacitance in Multidomain Hf _0.5 Zr _0.5 O ₂ ‐Based Ferroelectric/Dielectric Heterostructures Hoffmann, Michael; Gui, Mengcheng; Slesazeck, Stefan Advanced Functional Materials, Vol. 32, Issue 2 https://doi.org/10.1002/adfm.202108494	journal	October 2021
Hierarchical Manipulation of Block Copolymer Patterns on 3D Topographic Substrates: Beyond Graphoepitaxy Park, Sungjune; Cheng, Xiao; Böker, Alexander Advanced Materials, Vol. 28, Issue 32 https://doi.org/10.1002/adma.201601098	journal	June 2016
The approximation of the Fermi-Dirac integral 12 (η) Bednarczyk, D.; Bednarczyk, J. Physics Letters A, Vol. 64, Issue 4 https://doi.org/10.1016/0375-9601(78)90283-9	journal	January 1978
Applications of semi-implicit Fourier-spectral method to phase field equations Chen, L. Q.; Shen, Jie Computer Physics Communications, Vol. 108, Issue 2-3 https://doi.org/10.1016/S0010-4655(97)00115-X	journal	February 1998
Effect of electrical boundary conditions on the polarization distribution around a crack embedded in a ferroelectric single domain Wang, Jie; Kamlah, Marc Engineering Fracture Mechanics, Vol. 77, Issue 18 https://doi.org/10.1016/j.engfracmech.2010.07.007	journal	December 2010
Current status and challenges of ferroelectric memory devices Kohlstedt, H.; Mustafa, Y.; Gerber, A. Microelectronic Engineering, Vol. 80 https://doi.org/10.1016/j.mee.2005.04.084	journal	June 2005
Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS ₂ Transistors McGuire, Felicia A.; Lin, Yuh-Chen; Price, Katherine Nano Letters, Vol. 17, Issue 8 https://doi.org/10.1021/acs.nanolett.7b01584	journal	July 2017
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices Salahuddin, Sayeef; Datta, Supriyo Nano Letters, Vol. 8, Issue 2 https://doi.org/10.1021/nl071804g	journal	February 2008
Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature Appleby, Daniel J. R.; Ponon, Nikhil K.; Kwa, Kelvin S. K. Nano Letters, Vol. 14, Issue 7 https://doi.org/10.1021/nl5017255	journal	June 2014
Negative capacitance in multidomain ferroelectric superlattices Zubko, Pavlo; Wojdeł, Jacek C.; Hadjimichael, Marios Nature, Vol. 534, Issue 7608 https://doi.org/10.1038/nature17659	journal	June 2016
Negative capacitance in a ferroelectric capacitor Khan, Asif Islam; Chatterjee, Korok; Wang, Brian Nature Materials, Vol. 14, Issue 2 https://doi.org/10.1038/nmat4148	journal	December 2014
The ferroelectric field-effect transistor with negative capacitance Luk’yanchuk, I.; Razumnaya, A.; Sené, A. npj Computational Materials, Vol. 8, Issue 1 https://doi.org/10.1038/s41524-022-00738-2	journal	March 2022
Ferroelectric negative capacitance Íñiguez, Jorge; Zubko, Pavlo; Luk’yanchuk, Igor Nature Reviews Materials, Vol. 4, Issue 4 https://doi.org/10.1038/s41578-019-0089-0	journal	March 2019
Spatially resolved steady-state negative capacitance Yadav, Ajay K.; Nguyen, Kayla X.; Hong, Zijian Nature, Vol. 565, Issue 7740 https://doi.org/10.1038/s41586-018-0855-y	journal	January 2019
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors Cheema, Suraj S.; Shanker, Nirmaan; Wang, Li-Chen Nature, Vol. 604, Issue 7904 https://doi.org/10.1038/s41586-022-04425-6	journal	April 2022
Occurrence of the potent mutagens 2- nitrobenzanthrone and 3-nitrobenzanthrone in fine airborne particles Santos, Aldenor G.; da Rocha, Gisele O.; de Andrade, Jailson B. Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-018-37186-2	journal	January 2019
Re-epithelialization and immune cell behaviour in an ex vivo human skin model Rakita, Ana; Nikolić, Nenad; Mildner, Michael Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-019-56847-4	journal	January 2020
The future of ferroelectric field-effect transistor technology Khan, Asif Islam; Keshavarzi, Ali; Datta, Suman Nature Electronics, Vol. 3, Issue 10 https://doi.org/10.1038/s41928-020-00492-7	journal	October 2020
A review on the development of lead-free ferroelectric energy-storage ceramics and multilayer capacitors Zhang, Haibo; Wei, Tian; Zhang, Qi Journal of Materials Chemistry C, Vol. 8, Issue 47 https://doi.org/10.1039/D0TC04381H	journal	January 2020
Phase-field model of domain structures in ferroelectric thin films Li, Y. L.; Hu, S. Y.; Liu, Z. K. Applied Physics Letters, Vol. 78, Issue 24 https://doi.org/10.1063/1.1377855	journal	June 2001
Device modeling of ferroelectric capacitors Miller, S. L.; Nasby, R. D.; Schwank, J. R. Journal of Applied Physics, Vol. 68, Issue 12 https://doi.org/10.1063/1.346845	journal	December 1990
Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures Islam Khan, Asif; Bhowmik, Debanjan; Yu, Pu Applied Physics Letters, Vol. 99, Issue 11 https://doi.org/10.1063/1.3634072	journal	September 2011
Phase field model of domain dynamics in micron scale, ultrathin ferroelectric films: Application for multiferroic bismuth ferrite Ashraf, Khalid; Salahuddin, Sayeef Journal of Applied Physics, Vol. 112, Issue 7 https://doi.org/10.1063/1.4754800	journal	October 2012
Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO Saha, Atanu K.; Ni, Kai; Dutta, Sourav Applied Physics Letters, Vol. 114, Issue 20 https://doi.org/10.1063/1.5092707	journal	May 2019
Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide Si, Mengwei; Lyu, Xiao; Shrestha, Pragya R. Applied Physics Letters, Vol. 115, Issue 7 https://doi.org/10.1063/1.5098786	journal	August 2019
Next generation ferroelectric materials for semiconductor process integration and their applications Mikolajick, T.; Slesazeck, S.; Mulaosmanovic, H. Journal of Applied Physics, Vol. 129, Issue 10 https://doi.org/10.1063/5.0037617	journal	March 2021
XCVI. Theory of barium titanate: Part I Devonshire, A. F. The London, Edinburgh, and Dublin Philosophical Magazine and Journal of Science, Vol. 40, Issue 309 https://doi.org/10.1080/14786444908561372	journal	October 1949
Negative Capacitance Transistors Wong, Justin C.; Salahuddin, Sayeef Proceedings of the IEEE, Vol. 107, Issue 1 https://doi.org/10.1109/JPROC.2018.2884518	journal	January 2019
Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching Jo, Jaesung; Shin, Changhwan IEEE Electron Device Letters, Vol. 37, Issue 3 https://doi.org/10.1109/LED.2016.2523681	journal	March 2016
First Demonstration of a Logic-Process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications Seo, Myungsoo; Kang, Min-Ho; Jeon, Seung-Bae IEEE Electron Device Letters, Vol. 39, Issue 9 https://doi.org/10.1109/LED.2018.2852698	journal	September 2018
Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Above-Threshold Behavior Pahwa, Girish; Agarwal, Amit; Chauhan, Yogesh Singh IEEE Transactions on Electron Devices, Vol. 66, Issue 3 https://doi.org/10.1109/TED.2019.2892186	journal	March 2019
The Past, the Present, and the Future of Ferroelectric Memories Mikolajick, T.; Schroeder, U.; Slesazeck, S. IEEE Transactions on Electron Devices, Vol. 67, Issue 4 https://doi.org/10.1109/TED.2020.2976148	journal	April 2020
Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits Yin, Xunzhao; Chen, Xiaoming; Niemier, Michael IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 27, Issue 1 https://doi.org/10.1109/TVLSI.2018.2871119	journal	January 2019
Phase-Field Method of Phase Transitions/Domain Structures in Ferroelectric Thin Films: A Review Chen, Long-Qing Journal of the American Ceramic Society, Vol. 91, Issue 6 https://doi.org/10.1111/j.1551-2916.2008.02413.x	journal	June 2008
APPLIED PHYSICS: Tunneling Across a Ferroelectric Tsymbal, E. Y. Science, Vol. 313, Issue 5784 https://doi.org/10.1126/science.1126230	journal	July 2006
Limits on Silicon Nanoelectronics for Terascale Integration Meindl, J. D. Science, Vol. 293, Issue 5537 https://doi.org/10.1126/science.293.5537.2044	journal	September 2001
Ferroelastic Domain Structure and Switching in Epitaxial Ferroelectric thin Films Lee, Kilho; Baik, Sunggi Annual Review of Materials Research, Vol. 36, Issue 1 https://doi.org/10.1146/annurev.matsci.36.090804.094613	journal	August 2006
AMReX: Block-structured adaptive mesh refinement for multiphysics applications Zhang, Weiqun; Myers, Andrew; Gott, Kevin The International Journal of High Performance Computing Applications https://doi.org/10.1177/10943420211022811	journal	June 2021

Similar Records

Panda: A Compiler Framework for Concurrent CPU $+$ GPU Execution of 3D Stencil Computations on GPU-accelerated Supercomputers

Journal Article · 2016 · International Journal of Parallel Programming · OSTI ID:1525220

Sourouri, Mohammed; Baden, Scott B.; Cai, Xing

3D Ferroelectric Phase Field Simulations of Polycrystalline Multi‐Phase Hafnia and Zirconia Based Ultra‐Thin Films

Journal Article · 2024 · Advanced Electronic Materials · OSTI ID:2377464

Kumar, Prabhat; Hoffmann, Michael; Nonaka, Andy; +2 more

Introducing GPU Acceleration into the Python-Based Simulations of Chemistry Framework

Journal Article · 2025 · Journal of Physical Chemistry. A, Molecules, Spectroscopy, Kinetics, Environment, and General Theory · OSTI ID:2505073

Li, Rui; Sun, Qiming; Zhang, Xing; +1 more

Related Subjects

97 MATHEMATICS AND COMPUTING
ferroelectric devices
high performance computing
negative capacitance
phase-field modeling

Title: FerroX: A GPU-accelerated, 3D phase-field simulation framework for modeling ferroelectric devices

Citation Formats

References (38)

Similar Records

Related Subjects