Tuning Amorphous Selenium Composition with Tellurium to Improve Quantum Efficiency at Long Wavelengths and High Applied Fields

Hellier, Kaitlin; Stewart, Derek A.; Read, John; Sfadia, Roy; Abbaszadeh, Shiva

doi:10.1021/acsaelm.3c00150

Title: Tuning Amorphous Selenium Composition with Tellurium to Improve Quantum Efficiency at Long Wavelengths and High Applied Fields

Journal Article · 03 May 2023 · ACS Applied Electronic Materials

DOI: https://doi.org/10.1021/acsaelm.3c00150 · OSTI ID:1972382

^[1];

^[2]; Read, John ^[2]; Sfadia, Roy ^[1]; Abbaszadeh, Shiva ^[1]

University of California, Santa Cruz, CA (United States)
Western Digital Corporation San Jose Research Center, CA (United States)

Amorphous selenium (a-Se) is a large-area compatible photoconductor that has received significant attention toward the development of UV and X-ray detectors for a wide range of applications in medical imaging, life science, high-energy physics, and nuclear radiation detection. A subset of applications require detection of photons with spectral coverage from UV to infrared wavelengths. In this work, we present a systematic study utilizing density functional theory simulations and experimental studies to investigate optical and electrical properties of a-Se alloyed with tellurium (Te). We report hole and electron mobilities and conversion efficiencies for a-Se_1–xTe_x (x = 0, 0.03, 0.05, 0.08) devices as a function of applied field, along with band gaps and comparisons to previous studies. For the first time, these values are reported at high electric field (>10 V/μm), demonstrating recovery of quantum efficiency in Se–Te alloys. A comparison to the Onsager model for a-Se demonstrates the strong field dependence in the thermalization length and expands on the role of defect states in device performance.

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Research Organization:: Univ. of California, Santa Cruz, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); USDOE

Grant/Contract Number:: SC0022343; 1126845; DESC0022343

OSTI ID:: 1972382

Alternate ID(s):: OSTI ID: 1974728

Journal Information:: ACS Applied Electronic Materials, Vol. 5, Issue 5; ISSN 2637-6113

Publisher:: ACS PublicationsCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Tuning Amorphous Selenium Composition with Tellurium to Improve Quantum Efficiency at Long Wavelengths and High Applied Fields

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