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Title: Optical, electrical, and EPR studies of polycrystalline Al:Cr:ZnSe gain elements

Journal Article · · Optical Materials Express
DOI: https://doi.org/10.1364/ome.486169 · OSTI ID:1972016
 [1]; ORCiD logo [1];  [1];  [1];  [2]; ORCiD logo [1]
  1. Univ. of Alabama, Birmingham, AL (United States)
  2. IPG Photonics Southeast Technology Center, Birmingham, AL (United States)
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Transition metal-doped II-VI (TM:II-VI) chalcogenides are well-known laser materials for optically pumped middle-infrared lasers. Cr:ZnSe is a key representative of this class of transition metal doped II-VI gain media and is arguably considered the material of choice for optically pumped middle-infrared lasers. In addition to effective mid-IR lasing under optical excitation, these crystals, being wide-band semiconductors, hold the potential for direct electrical excitation. One way to form n-type conductivity in ZnSe crystals is by annealing them in a melt of Zn-Al alloy. However, this annealing of Cr:ZnSe crystals results in their purification and transfer of chromium to the melt of Zn-Al alloy. In this article, we report on optimizing the doping technique for providing n-type conductivity in Al:Cr:ZnSe crystals while preserving the chromium concentration. Al:Cr:ZnSe samples with resistivities ranging from 10.8 to 992 Ω-cm were fabricated. While the 2 + valence state of Cr is typically dominant in Cr:ZnSe, both Cr2+ and Cr+ were detected in Al:Cr:ZnSe samples. The maximum level of Cr+ concentration was measured to be 4 × 1018 cm-3.

Research Organization:
Univ. of Alabama, Birmingham, AL (United States)
Sponsoring Organization:
USDOE Office of Science (SC); National Institutes of Health (NIH); USDOE
Grant/Contract Number:
SC0018378; P42ES027723; DESC0018378
OSTI ID:
1972016
Alternate ID(s):
OSTI ID: 2420775
Journal Information:
Optical Materials Express, Vol. 13, Issue 5; ISSN 2159-3930
Publisher:
Optical Society of America (OSA)Copyright Statement
Country of Publication:
United States
Language:
English

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Hot-isostatic-pressed Cr:ZnSe ultrafast laser at 2.4 μm journal October 2022

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