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Title: Ultrahigh‐Flux X‐ray Detection by a Solution‐Grown Perovskite CsPbBr 3 Single‐Crystal Semiconductor Detector

Journal Article · · Advanced Materials
ORCiD logo [1];  [2];  [3];  [1];  [4]; ORCiD logo [1];  [1];  [5]; ORCiD logo [6];  [7];  [3];  [2]; ORCiD logo [8]
  1. Department of Chemistry Northwestern University Evanston IL 60208 USA
  2. Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA
  3. University of Lille CNRS Centrale Lille Institut Univ. Artois UMR 8181−UCCS− Unité de Catalyse et Chimie du Solide Lille F‐59000 France
  4. Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA, Department of Chemistry, Physics, &, Engineering Studies Chicago State University Chicago IL 60608 USA
  5. Department of Chemistry Northwestern University Evanston IL 60208 USA, Materials Science Division Argonne National Laboratory Lemont IL 60439 USA
  6. X‐ray Science Division Argonne National Laboratory Lemont IL 60439 USA
  7. Materials Science Division Argonne National Laboratory Lemont IL 60439 USA
  8. Department of Chemistry Northwestern University Evanston IL 60208 USA, Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA, Materials Science Division Argonne National Laboratory Lemont IL 60439 USA

Abstract Solution‐processed perovskites are promising for hard X‐ray and gamma‐ray detection, but there are limited reports on their performance under extremely intense X‐rays. Here, a solution‐grown all‐inorganic perovskite CsPbBr 3 single‐crystal semiconductor detector capable of operating at ultrahigh X‐ray flux of 10 10 photons s −1 mm −2 is reported. High‐quality solution‐grown CsPbBr 3 single crystals are fabricated into detectors with a Schottky diode structure of eutectic gallium indium/CsPbBr 3 /Au. A high reverse‐bias voltage of 1000 V (435 V mm 1 ) can be applied with a small and stable dark current of ≈60–70 nA (≈9–10 nA mm 2 ), which enables a high sensitivity larger than 10 000 µC Gy air −1 cm 2 and a simultaneous low detection limit of 22 nGy air s 1 . The CsPbBr 3 semiconductor detector shows an excellent photocurrent linearity and reproducibility under 58.61 keV synchrotron X‐rays with flux from 10 6 to 10 10 photons s 1 mm 2 . Defect characterization by thermally stimulated current spectroscopy shows a similar low defect density of a synchrotron X‐ray and a lab X‐ray irradiated device. Solid‐state nuclear magnetic resonance spectroscopy suggests that the excellent performance of the solution‐grown CsPbBr 3 single crystal may be associated with its good short‐range order, comparable to the spectrometer‐grade melt‐grown CsPbBr 3 .

Sponsoring Organization:
USDOE
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1971953
Journal Information:
Advanced Materials, Journal Name: Advanced Materials Journal Issue: 25 Vol. 35; ISSN 0935-9648
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
Germany
Language:
English

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