Non-volatile electric control of magnetic and topological properties of MnBi₂Te₄ thin films

Journal Article · 27 April 2023 · 2D Materials

DOI: https://doi.org/10.1088/2053-1583/accaf7 · OSTI ID:1971927

Luo, Wei  ^[1]; Du, Mao-Hua  ^[1]; Reboredo, Fernando A.  ^[1]; Yoon, Mina  ^[1]

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1. Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

In this letter, we propose a mechanism to control the magnetic properties of topological quantum material (TQM) by using magnetoelectric coupling: this mechanism uses a heterostructure of TQM with two-dimensional (2D) ferroelectric material, which can dynamically control the magnetic order by changing the polarization of the ferroelectric material and induce possible topological phase transitions. This concept is demonstrated using the example of the bilayer MnBi₂Te₄ on ferroelectric In₂Se₃ or In₂Te₃, where the polarization direction of the 2D ferroelectrics determines the interfacial band alignment and consequently the direction of the charge transfer. This charge transfer, in turn, enhances the stability of the ferromagnetic state of MnBi₂Te₄ and leads to a possible topological phase transition between the quantum anomalous Hall (QAH) effect and the zero plateau QAH. Our work provides a route to dynamically alter the magnetic ordering of TQMs and could lead to the discovery of new multifunctional topological heterostructures.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Quantum Science Center (QSC)
• Sponsoring Organization: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
• Grant/Contract Number: AC02-05CH11231; AC05-00OR22725
• OSTI ID: 1971927
• Journal Information: 2D Materials, Journal Name: 2D Materials Journal Issue: 3 Vol. 10; ISSN 2053-1583
• Publisher: IOP PublishingCopyright Statement
• Country of Publication: United States
• Language: English