Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications

Chen, Kuan-Yu; Tripathy, Prabhat K.; Mondal, Kunal; Zhang, Hongliang; Couet, Adrien; Andrews, Joseph B.

doi:10.1021/acs.nanolett.3c00112

Title: Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications

Journal Article · 02 April 2023 · Nano Letters

DOI: https://doi.org/10.1021/acs.nanolett.3c00112 · OSTI ID:1971018

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^[1]; Andrews, Joseph B. ^[1]

Univ. of Wisconsin, Madison, WI (United States)
Idaho National Lab. (INL), Idaho Falls, ID (United States)
Idaho National Lab. (INL), Idaho Falls, ID (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-processable electronics to be deployed in harsh environments. By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. Here, this letter reports the fabrication of SiC NW Schottky diodes. Each diode consisted of just one nanowire with an approximate diameter of 160 nm. In addition to analyzing the diode performance, the effects of elevated temperatures and proton irradiation on the current–voltage characteristics of SiC NW Schottky diodes were also examined. The device could maintain similar values for ideality factor, barrier height, and effective Richardson constant upon proton irradiation with a fluence of 10¹⁶ ion/cm² at 873 K. As a result, these metrics have clearly demonstrated the high-temperature tolerance and irradiation resistance of SiC NWs, ultimately indicating that they may provide utility in allowing solution-processable electronics in harsh environments.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1971018

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 7 Vol. 23; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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77 NANOSCIENCE AND NANOTECHNOLOGY
diodes
irradiation
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radiation
Schottky diodes
silicon carbide
nanowires
harsh environments
solution processed

Title: Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications

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