Probing transport energies and defect states in organic semiconductors using energy resolved electrochemical impedance spectroscopy

Shahi, Maryam; Atapattu, Harindi R.; Baustert, Kyle N.; Anthony, John E.; Brill, Joseph W.; Johnson, Stephen; Graham, Kenneth R.

doi:10.1002/admi.202202256

Title: Probing transport energies and defect states in organic semiconductors using energy resolved electrochemical impedance spectroscopy

Journal Article · 18 April 2023 · Advanced Materials Interfaces

DOI: https://doi.org/10.1002/admi.202202256 · OSTI ID:1970639

Shahi, Maryam ^[1]; Atapattu, Harindi R. ^[2]; Baustert, Kyle N. ^[2]; Anthony, John E. ^[1]; Brill, Joseph W. ^[3]; Johnson, Stephen ^[4];

^[2]

Center for Applied Energy Research University of Kentucky 2540 Research Park Drive Lexington KY 40506 USA
Department of Chemistry University of Kentucky 125 Chemistry/Physics Building Lexington KY 40506 USA
Department of Physics University of Kentucky 125 Chemistry/Physics Building Lexington KY 40506 USA
Department of Physics Transylvania University Brown Science Center 101, 300 N. Broadway Lexington KY 40508 USA

Abstract Determining the relative energies of transport states in organic semiconductors is critical to understanding the properties of electronic devices and in designing device stacks. Futhermore, defect states are also highly important and can greatly impact material properties and device performance. Recently, energy‐resolved electrochemical impedance spectroscopy (ER‐EIS) is developed to probe both the ionization energy (IE) and electron affinity (EA) as well as sub‐bandgap defect states in organic semiconductors. Herein, ER‐EIS is compared to cyclic voltammetry (CV) and photoemission spectroscopies for extracting IE and EA values, and to photothermal deflection spectroscopy (PDS) for probing defect states in both polymer and molecular organic semiconductors. The results show that ER‐EIS determined IE and EA are in better agreement with photoemission spectroscopy measurements as compared to CV for both polymer and molecular materials. Furthermore, the defect states detected by ER‐EIS agree with sub‐bandgap features detected by PDS. Surprisingly, ER‐EIS measurements of regiorandom and regioregular poly(3‐hexylthiophene) (P3HT) show clear defect bands that occur at significantly different energies. In regioregular P3HT the defect band is near the edge of the occupied states while it is near the edge of the unoccupied states in regiorandom P3HT.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: NONE; SC0018208

OSTI ID:: 1970639

Journal Information:: Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Journal Issue: 19 Vol. 10; ISSN 2196-7350

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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