Depth-dependent recovery of thermal conductivity after recrystallization of amorphous silicon
Abstract
The depth-dependent recovery of silicon thermal conductivity was achieved after the recrystallization of silicon that had been partially amorphized due to ion implantation. Transmission electron microscopy revealed nanoscale amorphous pockets throughout a structurally distorted band of crystalline material. The minimum thermal conductivity of as-implanted composite material was 2.46 W m −1 K −1 and was found to be uniform through the partially amorphized region. X-ray diffraction measurements reveal 60% strain recovery of the crystalline regions after annealing at 450 °C for 30 min and almost full strain recovery and complete recrystallization after annealing at 700 °C for 30 min. In addition to strain recovery, the amorphous band thickness reduced from 240 to 180 nm after the 450 °C step with nanoscale recrystallization within the amorphous band. A novel depth-dependent thermal conductivity measurement technique correlated thermal conductivity with the structural changes, where, upon annealing, the low thermal conductivity region decreases with the distorted layer thickness reduction and the transformed material shows bulk-like thermal conductivity. Full recovery of bulk-like thermal conductivity in silicon was achieved after annealing at 700 °C for 30 min. After the 700 °C anneal, extended defects remain at the implant projected range, but not elsewhere in the layer. Previous results showed that high point-defect density led to reduced thermalmore »
- Authors:
-
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, USA
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1968074
- Grant/Contract Number:
- NA-0003525
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Name: Journal of Applied Physics Journal Volume: 133 Journal Issue: 13; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Huynh, Kenny, Wang, Yekan, Liao, Michael E., Pfeifer, Thomas, Tomko, John, Scott, Ethan, Hattar, Khalid, Hopkins, Patrick E., and Goorsky, Mark S. Depth-dependent recovery of thermal conductivity after recrystallization of amorphous silicon. United States: N. p., 2023.
Web. doi:10.1063/5.0133548.
Huynh, Kenny, Wang, Yekan, Liao, Michael E., Pfeifer, Thomas, Tomko, John, Scott, Ethan, Hattar, Khalid, Hopkins, Patrick E., & Goorsky, Mark S. Depth-dependent recovery of thermal conductivity after recrystallization of amorphous silicon. United States. https://doi.org/10.1063/5.0133548
Huynh, Kenny, Wang, Yekan, Liao, Michael E., Pfeifer, Thomas, Tomko, John, Scott, Ethan, Hattar, Khalid, Hopkins, Patrick E., and Goorsky, Mark S. Fri .
"Depth-dependent recovery of thermal conductivity after recrystallization of amorphous silicon". United States. https://doi.org/10.1063/5.0133548.
@article{osti_1968074,
title = {Depth-dependent recovery of thermal conductivity after recrystallization of amorphous silicon},
author = {Huynh, Kenny and Wang, Yekan and Liao, Michael E. and Pfeifer, Thomas and Tomko, John and Scott, Ethan and Hattar, Khalid and Hopkins, Patrick E. and Goorsky, Mark S.},
abstractNote = {The depth-dependent recovery of silicon thermal conductivity was achieved after the recrystallization of silicon that had been partially amorphized due to ion implantation. Transmission electron microscopy revealed nanoscale amorphous pockets throughout a structurally distorted band of crystalline material. The minimum thermal conductivity of as-implanted composite material was 2.46 W m −1 K −1 and was found to be uniform through the partially amorphized region. X-ray diffraction measurements reveal 60% strain recovery of the crystalline regions after annealing at 450 °C for 30 min and almost full strain recovery and complete recrystallization after annealing at 700 °C for 30 min. In addition to strain recovery, the amorphous band thickness reduced from 240 to 180 nm after the 450 °C step with nanoscale recrystallization within the amorphous band. A novel depth-dependent thermal conductivity measurement technique correlated thermal conductivity with the structural changes, where, upon annealing, the low thermal conductivity region decreases with the distorted layer thickness reduction and the transformed material shows bulk-like thermal conductivity. Full recovery of bulk-like thermal conductivity in silicon was achieved after annealing at 700 °C for 30 min. After the 700 °C anneal, extended defects remain at the implant projected range, but not elsewhere in the layer. Previous results showed that high point-defect density led to reduced thermal conductivity, but here, we show that point defects can either reform into the lattice or evolve into extended defects, such as dislocation loops, and these very localized, low-density defects do not have a significant deleterious impact on thermal conductivity in silicon.},
doi = {10.1063/5.0133548},
journal = {Journal of Applied Physics},
number = 13,
volume = 133,
place = {United States},
year = {Fri Apr 07 00:00:00 EDT 2023},
month = {Fri Apr 07 00:00:00 EDT 2023}
}
https://doi.org/10.1063/5.0133548
Works referenced in this record:
Thermal Energy Transport in Oxide Nuclear Fuel
journal, December 2021
- Hurley, David H.; El-Azab, Anter; Bryan, Matthew S.
- Chemical Reviews, Vol. 122, Issue 3
Exfoliation of β-Ga2O3Along a Non-Cleavage Plane Using Helium Ion Implantation
journal, January 2019
- Liao, Michael E.; Wang, Yekan; Bai, Tingyu
- ECS Journal of Solid State Science and Technology, Vol. 8, Issue 11
Strain and mosaic spread of carbon and gallium co‐implanted GaAs
journal, August 1994
- Horng, S. T.; Goorsky, M. S.; Madok, J. H.
- Journal of Applied Physics, Vol. 76, Issue 4
Sensitivity of thermal transport in thorium dioxide to defects
journal, June 2018
- Park, Jungkyu; Farfán, Eduardo B.; Mitchell, Katherine
- Journal of Nuclear Materials, Vol. 504
Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates
journal, April 2020
- Wang, Yekan; Huynh, Kenny; Liao, Michael E.
- physica status solidi (b), Vol. 257, Issue 4
Thermal conductivity measurement from 30 to 750 K: the 3ω method
journal, February 1990
- Cahill, David G.
- Review of Scientific Instruments, Vol. 61, Issue 2
Implementation of a multilayer model for measurement of thermal conductivity in ion beam irradiated samples using a modulated thermoreflectance approach
journal, October 2018
- Riyad, M. Faisal; Chauhan, Vinay; Khafizov, Marat
- Journal of Nuclear Materials, Vol. 509
Phonon scattering effects from point and extended defects on thermal conductivity studied via ion irradiation of crystals with self-impurities
journal, September 2018
- Scott, Ethan A.; Hattar, Khalid; Rost, Christina M.
- Physical Review Materials, Vol. 2, Issue 9
Measuring sub-surface spatially varying thermal conductivity of silicon implanted with krypton
journal, August 2022
- Pfeifer, Thomas W.; Tomko, John A.; Hoglund, Eric
- Journal of Applied Physics, Vol. 132, Issue 7
Implantation and damage under low-energy Si self-bombardment
journal, February 1998
- Hensel, Hartmut; Urbassek, Herbert M.
- Physical Review B, Vol. 57, Issue 8
High resolution and in situ investigation of defects in Bi-irradiated Si
journal, November 1984
- Ruault, M. O.; Chaumont, J.; Penisson, J. M.
- Philosophical Magazine A, Vol. 50, Issue 5
Reductions in the thermal conductivity of irradiated silicon governed by displacement damage
journal, October 2021
- Scott, Ethan A.; Hattar, Khalid; Lang, Eric J.
- Physical Review B, Vol. 104, Issue 13
Thermal conductivity of Al2O3 irradiated with swift heavy ions
journal, October 2022
- Rymzhanov, R. A.; Akzhunussov, A.; Volkov, A. E.
- Nuclear Materials and Energy, Vol. 33
A steady-state thermoreflectance method to measure thermal conductivity
journal, February 2019
- Braun, Jeffrey L.; Olson, David H.; Gaskins, John T.
- Review of Scientific Instruments, Vol. 90, Issue 2
Evolution from point to extended defects in ion implanted silicon
journal, July 1997
- Benton, J. L.; Libertino, S.; Kringho/j, P.
- Journal of Applied Physics, Vol. 82, Issue 1
Measurement of thermal conductivity in proton irradiated silicon
journal, April 2014
- Khafizov, Marat; Yablinsky, Clarissa; Allen, Todd R.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 325
Low temperature exfoliation process in hydrogen-implanted germanium layers
journal, March 2010
- Ferain, I. P.; Byun, K. Y.; Colinge, C. A.
- Journal of Applied Physics, Vol. 107, Issue 5
Heavy ion damage in silicon and germanium
journal, January 1987
- Howe, L. M.; Rainville, M. H.
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 19-20
Thermal conductivity degradation induced by point defects in irradiated silicon carbide
journal, May 2011
- Crocombette, Jean-Paul; Proville, Laurent
- Applied Physics Letters, Vol. 98, Issue 19
The study of using a multi-layered model to extract thermal property profiles of ion-irradiated materials
journal, March 2019
- Hua, Zilong; Fleming, Austin; Ban, Heng
- International Journal of Heat and Mass Transfer, Vol. 131
Analysis of heat flow in layered structures for time-domain thermoreflectance
journal, December 2004
- Cahill, David G.
- Review of Scientific Instruments, Vol. 75, Issue 12
A frequency-domain thermoreflectance method for the characterization of thermal properties
journal, September 2009
- Schmidt, Aaron J.; Cheaito, Ramez; Chiesa, Matteo
- Review of Scientific Instruments, Vol. 80, Issue 9
Ion-beam processing of silicon at keV energies: A molecular-dynamics study
journal, December 1996
- Caturla, M. -J.; Díaz de la Rubia, T.; Marqués, L. A.
- Physical Review B, Vol. 54, Issue 23
The Surface Morphology of Hydrogen-Exfoliated InP and Exfoliation Parameters
journal, January 2007
- Hayashi, S.; Sandhu, R.; Goorsky, M. S.
- Journal of The Electrochemical Society, Vol. 154, Issue 4
A systematic analysis of defects in ion-implanted silicon
journal, January 1988
- Jones, K. S.; Prussin, S.; Weber, E. R.
- Applied Physics A Solids and Surfaces, Vol. 45, Issue 1
Thermal transport across nanoscale damage profile in sapphire irradiated by swift heavy ions
journal, January 2020
- Abdullaev, A.; Chauhan, V. S.; Muminov, B.
- Journal of Applied Physics, Vol. 127, Issue 3
Ion-beam-induced amorphization and recrystallization in silicon
journal, December 2004
- Pelaz, Lourdes; Marqués, Luis A.; Barbolla, Juan
- Journal of Applied Physics, Vol. 96, Issue 11
Degradation of thermal transport properties in fine-grained isotropic graphite exposed to swift heavy ion beams
journal, February 2020
- Prosvetov, Alexey; Hamaoui, Georges; Horny, Nicolas
- Acta Materialia, Vol. 184
Strain evolution in hydrogen-implanted silicon
journal, April 2003
- Miclaus, C.; Goorsky, M. S.
- Journal of Physics D: Applied Physics, Vol. 36, Issue 10A
Atomistic modeling of finite-temperature properties of crystalline β-SiC
journal, June 1998
- Li, Ju; Porter, Lisa; Yip, Sidney
- Journal of Nuclear Materials, Vol. 255, Issue 2-3
The Stopping and Range of Ions in Matter
book, January 1985
- Ziegler, James F.; Biersack, Jochen P.
- Treatise on Heavy-Ion Science
Low‐temperature reordering in partially amorphized Si crystals
journal, August 1990
- Priolo, Francesco; Battaglia, Anna; Nicotra, Ruggero
- Applied Physics Letters, Vol. 57, Issue 8
Features of collision cascades in silicon as determined by transmission electron microscopy
journal, April 1981
- Howe, L. M.; Rainville, M. H.
- Nuclear Instruments and Methods, Vol. 182-183
Complete p ‐type activation in vertical‐gradient freeze GaAs co‐implanted with gallium and carbon
journal, March 1996
- Horng, S. T.; Goorsky, M. S.
- Applied Physics Letters, Vol. 68, Issue 11
Characteristics of Ion‐Implantation Damage and Annealing Phenomena in Semiconductors
journal, November 1984
- Narayan, J.; Holland, O. W.
- Journal of The Electrochemical Society, Vol. 131, Issue 11
An integrated experimental and computational investigation of defect and microstructural effects on thermal transport in thorium dioxide
journal, July 2021
- Dennett, Cody A.; Deskins, W. Ryan; Khafizov, Marat
- Acta Materialia, Vol. 213
Thermal diffusivity recovery and defect annealing kinetics of self-ion implanted tungsten probed by insitu transient grating spectroscopy
journal, June 2022
- Reza, Abdallah; He, Guanze; Dennett, Cody A.
- Acta Materialia, Vol. 232
Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices
journal, January 2019
- Wang, Yekan; Bai, Tingyu; Li, Chao
- ECS Journal of Solid State Science and Technology, Vol. 8, Issue 2
Orders of magnitude reduction in the thermal conductivity of polycrystalline diamond through carbon, nitrogen, and oxygen ion implantation
journal, February 2020
- Scott, Ethan A.; Hattar, Khalid; Braun, Jeffrey L.
- Carbon, Vol. 157
Thermal conductivity of SiC after heavy ions irradiation
journal, January 2010
- Cabrero, J.; Audubert, F.; Pailler, R.
- Journal of Nuclear Materials, Vol. 396, Issue 2-3