Switching Dynamics in Vanadium Dioxide-Based Stochastic Thermal Neurons

Yu, Haoming; Islam, A. N. M. Nafiul; Mondal, Sandip; Sengupta, Abhronil; Ramanathan, Shriram

doi:10.1109/ted.2022.3168248

Title: Switching Dynamics in Vanadium Dioxide-Based Stochastic Thermal Neurons

Journal Article · 29 April 2022 · IEEE Transactions on Electron Devices

DOI: https://doi.org/10.1109/ted.2022.3168248 · OSTI ID:1961583

^[1];

^[2]; Mondal, Sandip ^[3];

^[2]; Ramanathan, Shriram ^[1]

Purdue Univ., West Lafayette, IN (United States)
Penn State Univ., State College, PA (United States)
Purdue Univ., West Lafayette, IN (United States); Indian Inst. of Technology, Mumbai (India)

We report on switching dynamics of individual and coupled vanadium dioxide (VO₂) devices subject to voltage pulses as the temperature is systematically varied from room temperature spanning the insulator–metal transition (IMT) temperature. The switching voltage of single devices has a strong relationship with both temperature and voltage pulsewidth. Two-step switching in connected VO₂ devices has been noted in current transient plots and was found to depend on temperature, pulsewidth, and pulse amplitude. Experimental switching behavior measured from VO₂ artificial neurons was implemented into a spiking neural network (SNN). During training, modulating the switching voltage via temperature affords a novel method to implement homeostasis with the coupled devices. Simulation results show the efficacy of the stochastic neuronal characteristics and the proposed homeostasis mechanism on a standard digit recognition task. As a result, these studies contribute to ongoing efforts in neuromorphic computing exploiting collective phase transitions.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Pennsylvania State Univ., University Park, PA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0021118

OSTI ID:: 1961583

Journal Information:: IEEE Transactions on Electron Devices, Vol. 69, Issue 6; ISSN 0018-9383

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

References (29)

Analog Spike Processing with High Scalability and Low Energy Consumption Using Thermal Degree of Freedom in Phase Transition Materials Yajima, T.; Nishimura, T.; Toriumi, A. 2018 IEEE Symposium on VLSI Technology https://doi.org/10.1109/VLSIT.2018.8510649	conference	June 2018
BindsNET: A Machine Learning-Oriented Spiking Neural Networks Library in Python Hazan, Hananel; Saunders, Daniel J.; Khan, Hassaan Frontiers in Neuroinformatics, Vol. 12 https://doi.org/10.3389/fninf.2018.00089	journal	December 2018
Electro-Thermal Model of Threshold Switching in TaO _x -Based Devices Goodwill, Jonathan M.; Sharma, Abhishek A.; Li, Dasheng ACS Applied Materials & Interfaces, Vol. 9, Issue 13 https://doi.org/10.1021/acsami.6b16559	journal	March 2017
Pulsed vs dc I-V measurements on Al_xV_1-xO₂ (x = 0–0.013) single crystals: Unmasking a non-thermal electric field effect on these crystals Patlagan, L.; Taitler, I.; Reisner, G. M. Applied Physics Letters, Vol. 119, Issue 22 https://doi.org/10.1063/5.0073797	journal	November 2021
Transient Joule Heating-Based Oscillator Neuron for Neuromorphic Computing Lashkare, S.; Kumbhare, P.; Saraswat, V. IEEE Electron Device Letters, Vol. 39, Issue 9 https://doi.org/10.1109/LED.2018.2854732	journal	September 2018
Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse Chae, Byung-Gyu; Kim, Hyun-Tak; Youn, Doo-Hyeb Physica B: Condensed Matter, Vol. 369, Issue 1-4 https://doi.org/10.1016/j.physb.2005.07.032	journal	December 2005
Electronic and thermal effects in the insulator-metal phase transition in VO₂ nano-gap junctions Joushaghani, Arash; Jeong, Junho; Paradis, Suzanne Applied Physics Letters, Vol. 105, Issue 23 https://doi.org/10.1063/1.4903806	journal	December 2014
Unsupervised learning of digit recognition using spike-timing-dependent plasticity Diehl, Peter U.; Cook, Matthew Frontiers in Computational Neuroscience, Vol. 9 https://doi.org/10.3389/fncom.2015.00099	journal	August 2015
Controlling the resistive switching hysteresis in VO₂ thin films via application of pulsed voltage Murtagh, O.; Walls, B.; Shvets, I. V. Applied Physics Letters, Vol. 117, Issue 6 https://doi.org/10.1063/5.0017784	journal	August 2020
Scaled resistively-coupled VO2 oscillators for neuromorphic computing Corti, Elisabetta; Gotsmann, Bernd; Moselund, Kirsten Solid-State Electronics, Vol. 168 https://doi.org/10.1016/j.sse.2019.107729	journal	June 2020
Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO ₂ /TiO ₂ Devices Li, Dasheng; Sharma, Abhishek A.; Gala, Darshil K. ACS Applied Materials & Interfaces, Vol. 8, Issue 20 https://doi.org/10.1021/acsami.6b03501	journal	May 2016
An X-ray diffraction study of semiconductor and metallic vanadium dioxide Rogers, K. D. Powder Diffraction, Vol. 8, Issue 4 https://doi.org/10.1017/S0885715600019448	journal	December 1993
Nanoscale Imaging and Control of Volatile and Non‐Volatile Resistive Switching in VO ₂ Shabalin, Anatoly G.; Valle, Javier; Hua, Nelson Small, Vol. 16, Issue 50 https://doi.org/10.1002/smll.202005439	journal	November 2020
Enhancing Threshold Switching Characteristics and Stability of Vanadium Oxide-Based Selector With Vanadium Electrode Yeh, Tsung-Han; Chen, Po-Hsun; Lin, Chih-Yang IEEE Transactions on Electron Devices, Vol. 67, Issue 11 https://doi.org/10.1109/TED.2020.3019773	journal	November 2020
Voltage-Pulse-Induced Switching Dynamics in $ \hbox{VO}_{2}$ Thin-Film Devices on Silicon Seo, Giwan; Kim, Bong-Jun; Ko, Changhyun IEEE Electron Device Letters, Vol. 32, Issue 11 https://doi.org/10.1109/LED.2011.2163922	journal	November 2011
Metal-insulator transition in vanadium dioxide Zylbersztejn, A.; Mott, N. F. Physical Review B, Vol. 11, Issue 11, p. 4383-4395 https://doi.org/10.1103/PhysRevB.11.4383	journal	June 1975
Effect of chemical doping on memristive behavior of VO₂ microcrystals Naik B., Raju; Verma, Divya; Balakrishnan, Viswanath Applied Physics Letters, Vol. 120, Issue 6 https://doi.org/10.1063/5.0075566	journal	February 2022
Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO ₂ film devices Yoon, Joonseok; Lee, Giyong; Park, Changwoo Applied Physics Letters, Vol. 105, Issue 8 https://doi.org/10.1063/1.4893783	journal	August 2014
Physics and technology of electronic insulator-to-metal transition (E-IMT) for record high on/off ratio and low voltage in device applications Lin, Jianqiang; Alam, Khan; Ocola, Leonidas 2017 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2017.8268446	conference	December 2017
Electrically Driven Insulator–Metal Transition-Based Devices—Part II: Transient Characteristics Lin, Jianqiang; Ramanathan, Shriram; Guha, Supratik IEEE Transactions on Electron Devices, Vol. 65, Issue 9 https://doi.org/10.1109/TED.2018.2859188	journal	September 2018
Mott Memory and Neuromorphic Devices Proceedings of the IEEE, Vol. 103, Issue 8 https://doi.org/10.1109/JPROC.2015.2431914	journal	August 2015
Influence of stoichiometry on the metal‐semiconductor transition in vanadium dioxide Griffiths, C. H.; Eastwood, H. K. Journal of Applied Physics, Vol. 45, Issue 5 https://doi.org/10.1063/1.1663568	journal	May 1974
Coupled VO2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks Corti, Elisabetta; Cornejo Jimenez, Joaquin Antonio; Niang, Kham M. Frontiers in Neuroscience, Vol. 15 https://doi.org/10.3389/fnins.2021.628254	journal	February 2021
Spontaneous current constriction in threshold switching devices Goodwill, Jonathan M.; Ramer, Georg; Li, Dasheng Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-09679-9	journal	April 2019
Biological plausibility and stochasticity in scalable VO2 active memristor neurons Yi, Wei; Tsang, Kenneth K.; Lam, Stephen K. Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-07052-w	journal	November 2018
Electrical and optical properties of metal-insulator-transition VO2 thin films Lappalainen, J.; Heinilehto, S.; Jantunen, H. Journal of Electroceramics, Vol. 22, Issue 1-3 https://doi.org/10.1007/s10832-008-9433-2	journal	February 2008
Magnetic Tunnel Junction Mimics Stochastic Cortical Spiking Neurons Sengupta, Abhronil; Panda, Priyadarshini; Wijesinghe, Parami Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep30039	journal	July 2016
Inherent stochasticity during insulator–metal transition in VO ₂ Cheng, Shaobo; Lee, Min-Han; Tran, Richard Proceedings of the National Academy of Sciences, Vol. 118, Issue 37 https://doi.org/10.1073/pnas.2105895118	journal	September 2021
A Sparse Coding Neural Network ASIC With On-Chip Learning for Feature Extraction and Encoding Knag, Phil; Kim, Jung Kuk; Chen, Thomas IEEE Journal of Solid-State Circuits, Vol. 50, Issue 4 https://doi.org/10.1109/JSSC.2014.2386892	journal	April 2015