Transducerless time domain reflectance measurement of semiconductor thermal properties
The dominant techniques for laser-based thermal measurement, time-domain thermoreflectance (TDTR) and frequency-domain thermoreflectance, generally require that samples be coated with a metal transducer layer. The properties of the transducer and its interface to the sample are then important to the interpretation of results, and heat conduction in the transducer layer can limit measurements of ultra-thin samples or in-plane conductivity. Here, we demonstrate the feasibility of measuring semiconductor samples using standard TDTR instrumentation, without the use of a metal transducer. A mathematical model accounting for non-zero laser penetration depth as well as both thermal and charge carrier effects is presented, and the ability of the model to describe and fit to experimental data for silicon and germanium samples is demonstrated. Though at this stage measurement uncertainties are larger than for traditional TDTR, we anticipate that the use of this technique will expand the range of samples that can be measured with existing TDTR setups.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1959974
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 131; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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