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Title: Anomalous electrical transport behavior in the vicinity of the first-order magnetostructural transition in the giant magnetocaloric Gd4ScGe4

Journal Article · · Physical Review. B

Here, magnetic, specific heat, and electrical transport measurements of Gd4ScGe4 single crystals reveal sharp, discontinuous, nearly anhysteretic first-order magnetostructural transformation at $$T_C$$ = 63 K. The electrical resistivity exhibits two distinct regions where it increases with decreasing temperature: between $$T_C$$ and 120 K, as well as below 3 K; electronic transport remains conventionally metallic at all other measured temperatures, up to 325 K. The dispersion of charge carriers due to electron-paramagnon scattering is the likely reason for the observed anomalous transport above $$T_C$$. Additionally, the existence of intermediate lattice states near the transition recognized by the spike in the interslab Ge-Ge distances is expected to reduce the mean free path of the electrons contributing to the unusual behavior of the electrical resistivity between $$T_C$$ and 120 K. Beyond conventional electronic and lattice terms, the third component of likely magnetic origin contributes to the low-temperature heat capacity; the presence of spin waves may be responsible for the increased electron-magnon scattering below 3 K. Minor magnetocrystalline anisotropy is observed with the b axis as the easy magnetization axis in Gd4ScGe4. A negative deviation from linearity in the temperature dependence of the inverse magnetic susceptibility is detected below 150 K.

Research Organization:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
AC02-07CH11358
OSTI ID:
1923475
Report Number(s):
IS-J-10,816
Journal Information:
Physical Review. B, Journal Name: Physical Review. B Journal Issue: 17 Vol. 105; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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