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Title: Direct growth of crystalline SiGe nanowires on superconducting NbTiN thin films

Journal Article · · Nanotechnology

Abstract Novel heterostructures created by coupling one-dimensional semiconductor nanowires with a superconducting thin film show great potential toward next-generation quantum computing. Here, by growing high-crystalline SiGe nanowires on a NbTiN thin film, the resulting heterostructure exhibits Ohmic characteristics as well as a shift of the superconducting transition temperature ( T c ). The structure was characterized at atomic resolution showing a sharp SiGe/NbTiN interface without atomic interdiffusion. Lattice spacing, as calculated from large-area x-ray diffraction experiments, suggests a potential preferred d -spacing matching between (200) NbTiN and (110) SiGe grains. The observed out-of-plane compressive strain within the NbTiN films coupled with SiGe nanowires explains the downward shift of the superconductivity behavior. The presented results post scientific insights toward functional heterostructures by coupling multi-dimensional materials, which could enable tunable superconductivity that benefits the quantum science applications.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
89233218CNA000001; AC04-94AL85000; AC52-06NA25396
OSTI ID:
1923428
Report Number(s):
LA-UR-22-29719
Journal Information:
Nanotechnology, Journal Name: Nanotechnology Journal Issue: 15 Vol. 34; ISSN 0957-4484
Publisher:
IOP PublishingCopyright Statement
Country of Publication:
United Kingdom
Language:
English

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