Molecular Engineering of 2D Nanomaterial Field-Effect Transistor Sensors: Fundamentals and Translation across Innovation Spectrum

Chen, Junhong; Pu, Haihui; Hersam, Mark C.; Westerhoff, Paul P.

doi:10.1002/adma.202106975

Title: Molecular Engineering of 2D Nanomaterial Field-Effect Transistor Sensors: Fundamentals and Translation across Innovation Spectrum

Journal Article · 18 December 2021 · Advanced Materials

DOI: https://doi.org/10.1002/adma.202106975 · OSTI ID:1922176

Chen, Junhong ^[1]; Pu, Haihui ^[1]; Hersam, Mark C. ^[2]; Westerhoff, Paul P. ^[3]

University of Chicago, IL (United States); Argonne National Laboratory (ANL), Lemont, IL (United States)
Northwestern University, Evanston, IL (United States)
Arizona State University, Mesa, AZ (United States)

We report over the last decade, 2D layered nanomaterials have attracted significant attention across the scientific community due to their rich and exotic properties. Various nanoelectronic devices based on these 2D nanomaterials have been explored and demonstrated, including those for environmental applications. Here, the fundamental attributes of 2D layered nanomaterials for field-effect transistor (FET) sensors and tunneling FET (TFET) sensors, which provide versatile detection of water contaminants such as heavy-metal ions, bacteria, nutrients, and organic pollutants, are discussed. The major challenges and opportunities are also outlined for designing and fabricating 2D nanomaterial FET/TFET sensors with superior performance. Translation of these FET/TFET sensors from fundamental research to applied technology is illustrated through a case study on graphene-based real-time FET water sensors. A second case study centers on large-scale sensor networks for water-quality monitoring to enable intelligent drinking water and river-water systems. Overall, 2D nanomaterial FET sensors have significant potential for enabling a human-centered intelligent water system that can likely be applied to other precarious water supplies around the globe.

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Research Organization:: Argonne National Laboratory (ANL), Lemont, IL (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1922176

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 3 Vol. 34; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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