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Title: Hall effect in gated single-wall carbon nanotube films

Journal Article · · Scientific Reports
 [1];  [2];  [2];  [2];  [2];  [2];  [2];  [3];  [4];  [3];  [2]
  1. Tokyo Metropolitan University (Japan); Tokyo Metropolitan Univ. (Japan)
  2. Tokyo Metropolitan University (Japan)
  3. Rice University, Houston, TX (United States)
  4. University of Utah, Salt Lake City, UT (United States)
+ Show Author Affiliations

The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal–semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n- and p-type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems.

Research Organization:
Rice University, Houston, TX (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Japan Science and Technology Agency (JST); Japan Society for the Promotion of Science (JSPS); Robert A. Welch Foundation
Grant/Contract Number:
FG02-06ER46308
OSTI ID:
1904647
Journal Information:
Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 12; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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