Light sources with bias tunable spectrum based on van der Waals interface transistors

Henck, Hugo; Mauro, Diego; Domaretskiy, Daniil; Philippi, Marc; Memaran, Shahriar; Zheng, Wenkai; Lu, Zhengguang; Shcherbakov, Dmitry; Lau, Chun Ning; Smirnov, Dmitry; Balicas, Luis; Watanabe, Kenji; Taniguchi, Takashi; Fal’ko, Vladimir I.; Gutiérrez-Lezama, Ignacio; Ubrig, Nicolas; Morpurgo, Alberto F.

doi:10.1038/s41467-022-31605-9

Title: Light sources with bias tunable spectrum based on van der Waals interface transistors

Journal Article · 07 July 2022 · Nature Communications

DOI: https://doi.org/10.1038/s41467-022-31605-9 · OSTI ID:1904629

^[1]; Mauro, Diego ^[2];

^[2]; Philippi, Marc ^[2]; Memaran, Shahriar ^[3]; Zheng, Wenkai ^[3]; Lu, Zhengguang ^[3];

^[3]; Lau, Chun Ning ^[4];

^[4];

^[3];

^[5];

^[6]; Gutiérrez-Lezama, Ignacio ^[2];

^[2];

^[2]

University of Geneva (Switzerland); Univ. of Geneva (Switzerland)
University of Geneva (Switzerland)
National High Magnetic Field Laboratory, Tallahassee, FL (United States)
The Ohio State University, Columbus, OH (United States)
National Institute for Materials Science, Tsukuba (Japan)
University of Manchester (United Kingdom); Henry Royce Institute for Advanced Materials, Manchester (United Kingdom)

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage –by suitably selecting the material forming the interfaces– and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.

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Research Organization:: Florida State University, Tallahassee, FL (United States); The Ohio State University, Columbus, OH (United States)

Sponsoring Organization:: Engineering and Physical Sciences Research Council (EPSRC); Japan Society for the Promotion of Science (JSPS); MEXT, Japan; National Science Foundation (NSF); Office Naval Research (ONR); Swiss National Science Foundation; USDOE Office of Science (SC)

Grant/Contract Number:: FG02-07ER46451

OSTI ID:: 1904629

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 13; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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