Low-Frequency Electronic Noise in Quasi-2D van der Waals Antiferromagnetic Semiconductor FePS3—Signatures of Phase Transitions

Ghosh, Subhajit; Kargar, Fariborz; Mohammadzadeh, Amirmahdi; Rumyantsev, Sergey; Balandin, Alexander A.

doi:10.1002/aelm.202100408

Title: Low-Frequency Electronic Noise in Quasi-2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions

Journal Article · 01 September 2021 · Advanced Electronic Materials

DOI: https://doi.org/10.1002/aelm.202100408 · OSTI ID:1904180

^[1];

^[2];

^[2]; Rumyantsev, Sergey ^[3];

^[2]

Univ. of California, Riverside, CA (United States); University of California Riverside
Univ. of California, Riverside, CA (United States)
Polish Academy of Sciences (PAS), Warsaw (Poland)

Here, low-frequency current fluctuations, i.e., noise, in the quasi-2D van der Waals antiferromagnetic semiconductor FePS₃ with the electronic bandgap of 1.5 eV is investigated. The electrical and noise characteristics of the p-type, highly resistive, thin films of FePS₃ are measured at different temperatures. The noise spectral density is of the 1/f-type over most of the examined temperature range but reveals well-defined Lorentzian bulges, and increases strongly near the Néel temperature T_N=118 K (f is the frequency). Intriguingly, the noise spectral density attains its minimum at temperature T≈200 K, which is attributed to an interplay of two opposite trends in noise scaling—one for semiconductors and another for materials with the phase transitions. The Lorentzian corner frequencies reveal unusual dependence on temperature and bias voltage, suggesting that their origin is different from the generation—recombination noise in conventional semiconductors. The obtained results are important for proposed applications of antiferromagnetic semiconductors in spintronic devices. They also attest to the power of the noise spectroscopy for monitoring various phase transitions.

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Research Organization:: Univ. of California, Riverside, CA (United States)

Sponsoring Organization:: European Union (EU); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0021020

OSTI ID:: 1904180

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 12 Vol. 7; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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