On optical properties and scintillation performance of emerging Ga2O3: Crystal growth, emission mechanisms and doping strategies

Blevins, Jacob; Yang, Ge

doi:10.1016/j.materresbull.2021.111494

Title: On optical properties and scintillation performance of emerging Ga₂O₃: Crystal growth, emission mechanisms and doping strategies

Journal Article · 03 August 2021 · Materials Research Bulletin

DOI: https://doi.org/10.1016/j.materresbull.2021.111494 · OSTI ID:1900317

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North Carolina State Univ., Raleigh, NC (United States); North Carolina State University
North Carolina State Univ., Raleigh, NC (United States)

As an emerging ultra-wide bandgap compound semiconductor, Ga₂O₃ has attracted rapidly growing interest due to its unique physical properties for harsh condition applications. Compared to Ga₂O₃’s electrical-characteristic based uses, such as power electronics, photodetectors and solar cells, a much less explored area for Ga₂O₃ is its promising optical properties and its related scintillation capabilities. Undoped Ga₂O₃ is a strong scintillator with excellent scintillation characteristics such as fast decay constants and encouraging light yield which is comparable to that of the classic Bi₄Ge₃O₁₂ (BGO) scintillator. The scintillation capability of Ga₂O₃ can be precisely tuned via a series of approaches including systematic crystal growth control, post-growth annealing, targeted doping, and optimization of operation temperature. Here we summarize exciting progress of Ga₂O₃ scintillators which have been pursued over the past few years. Our efforts cover a series of growth techniques of Ga₂O₃ materials as well as discussion of emission mechanisms. Here we dedicate a targeted portion toward the doping strategies to improve the performance of Ga₂O₃. A detailed analysis is provided to compare the impact of different dopants. Through these efforts, we hope to provide useful perspectives to help accelerate the development of high performance Ga₂O₃ scintillators.

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Research Organization:: North Carolina State Univ., Raleigh, NC (United States)

Sponsoring Organization:: USDOE Office of Science (SC), High Energy Physics (HEP)

Grant/Contract Number:: SC0021028

OSTI ID:: 1900317

Journal Information:: Materials Research Bulletin, Journal Name: Materials Research Bulletin Vol. 144; ISSN 0025-5408

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Eu Activation in β -Ga ₂ O ₃ MOVPE Thin Films by Ion Implantation Peres, M.; Nogales, E.; Mendez, B. ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7 https://doi.org/10.1149/2.0191907jss	journal	January 2019
Tailoring the scintillation properties of β-Ga ₂ O ₃ by doping with Ce and codoping with Si Makowski, Michal; Drozdowski, Winicjusz; Witkowski, Marcin E. Optical Materials Express, Vol. 9, Issue 9 https://doi.org/10.1364/OME.9.003738	journal	January 2019
Thermally Stimulated Luminescence and Conductivity of β-Ga2O3 Crystals Luchechko, A.; Vasyltsiv, V.; Kostyk, L. Journal of Nano- and Electronic Physics, Vol. 11, Issue 3 https://doi.org/10.21272/jnep.11(3).03035	journal	January 2019
Optical and scintillation properties of alkaline earth doped Ga ₂ O ₃ single crystals prepared by the floating zone method Yanagida, Takayuki; Kawaguchi, Noriaki Japanese Journal of Applied Physics, Vol. 59, Issue SC https://doi.org/10.7567/1347-4065/ab488f	journal	December 2019
Fast and high light yield scintillation in the Ga ₂ O ₃ semiconductor material Yanagida, Takayuki; Okada, Go; Kato, Takumi Applied Physics Express, Vol. 9, Issue 4 https://doi.org/10.7567/APEX.9.042601	journal	March 2016
Photoluminescent Properties of Eu ³⁺ in Ga ₂ O ₃ :Cr ³⁺ Films Prepared by Metal Organic Deposition Tokida, Yoshinori; Adachi, Sadao Japanese Journal of Applied Physics, Vol. 52, Issue 10R https://doi.org/10.7567/JJAP.52.101102	journal	October 2013
High-quality β-Ga ₂ O ₃ single crystals grown by edge-defined film-fed growth Kuramata, Akito; Koshi, Kimiyoshi; Watanabe, Shinya Japanese Journal of Applied Physics, Vol. 55, Issue 12 https://doi.org/10.7567/JJAP.55.1202A2	journal	November 2016

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36 MATERIALS SCIENCE
Doping
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Title: On optical properties and scintillation performance of emerging Ga2O3: Crystal growth, emission mechanisms and doping strategies

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Title: On optical properties and scintillation performance of emerging Ga₂O₃: Crystal growth, emission mechanisms and doping strategies