How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration

Gu, Rongchuan; Xu, Meng; Qiao, Chong; Wang, Cai-Zhuang; Ho, Kai-Ming; Wang, Songyou; Xu, Ming; Miao, Xiangshui

doi:10.1016/j.scriptamat.2022.114834

Title: How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration

Journal Article · 24 May 2022 · Scripta Materialia

DOI: https://doi.org/10.1016/j.scriptamat.2022.114834 · OSTI ID:1892310

Gu, Rongchuan ^[1]; Xu, Meng ^[2];

^[3]; Wang, Cai-Zhuang ^[4]; Ho, Kai-Ming ^[4]; Wang, Songyou ^[5]; Xu, Ming ^[1]; Miao, Xiangshui ^[1]

Huazhong Univ. of Science and Technology, Wuhan (China); Hubei Yangtze Memory Laboratories, Wuhan (China)
Huazhong Univ. of Science and Technology, Wuhan (China)
Huazhong Univ. of Science and Technology, Wuhan (China); Nanyang Institute of Technology (China)
Ames Lab., and Iowa State Univ., Ames, IA (United States)
Fudan Univ., Shanghai (China)

The 3D integration technology in semiconductor fabrication requires a key component, the ovonic threshold switching (OTS) selector, to suppress the current leakage. The As doped amorphous (a-) GeSe glass is a commercialized OTS material in 3D phase-change memory, but the understanding of such a doping mechanism is still inadequate. Here we systematically explore the effect of As doping on the structural, bonding, and dynamics properties of a-GeAsSe using ab initio molecular dynamics simulations. The results reveal that As atoms form strong bonds with both Ge and Se atoms. The distorted octahedral structures and the 5-fold rings linked by atoms are increased. All of these structural features lead to a more disordered configuration. Moreover, as atoms have notably slowed down the atomic mobility, rendering a-GeAsSe a high stability. Overall, our studies offer insightful understanding of As-doping in OTS materials, paving the way for the design and application of advanced selector devices.

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Research Organization:: Ames Laboratory (AMES), Ames, IA (United States)

Sponsoring Organization:: China Postdoctoral Science Foundation; Fundamental Research Funds for the Central Universities; Key Projects of Basic Research of the Shanghai Municipal Science and Technology Commission; National Natural Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-07CH11358

OSTI ID:: 1892310

Report Number(s):: IS-J-10,813

Journal Information:: Scripta Materialia, Journal Name: Scripta Materialia Vol. 218; ISSN 1359-6462

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Title: How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration

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