Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Epitaxial ZnGeP 2 Thin Films on Si and GaP by Reactive Combinatorial Sputtering in Phosphine

Abstract

Modern optoelectronic devices are constrained to a fixed collection of band gap and lattice parameter combinations by the limited number of semiconductors that can be epitaxially integrated with high crystal quality. II–IV–V2 compounds are promising materials to break this paradigm as changes to the cation lattice site disorder can modify the band gap without a substantial change to the lattice parameter. ZnGeP2 is a particularly interesting member of this group as it is lattice-matched to Si and GaP, but substantial work is needed to understand and improve the epitaxial growth of ZnGeP2. In this paper, we report on the growth of epitaxial ZnGeP2 on Si and GaP substrates via reactive combinatorial sputtering in phosphine gas. Reciprocal space maps revealed that films on both GaP and Si have high crystalline quality, matching that of the substrate. The out-of-plane lattice parameter was found to increase with increasing Ge content, displaying an alloy-like behavior. Films deposited on Si displayed a much larger range for the (004) peak full width at half maximum (FWHM) than those deposited on GaP. Due to the growth of a lower-symmetry material, ZnGeP2, on a higher-symmetry substrate, Si, it is likely that the films grown on Si have antiphasemore » domains and larger threading dislocation densities than those on GaP. Electron channeling contrast imaging revealed the films on GaP to be largely dislocation-free. In the films deposited on Si, the optical absorption onset energies trended toward lower energies with larger (004) FWHM values. These results suggest that the defects in the films on Si that result in a broadened (004) FWHM cause sub-band gap absorption. This work provides the first combinatorial study of epitaxial ZnGeP2 on Si and GaP and demonstrates the strong potential for the growth of high-quality epitaxial ZnGeP2 with future work optimizing synthesis conditions and substrate preparation.« less

Authors:
ORCiD logo [1]; ORCiD logo [2];  [1]; ORCiD logo [2];  [3]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [2];  [3]; ORCiD logo [2];  [4]; ORCiD logo [1]
+ Show Author Affiliations
  1. Physics Department, Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, United States, National Renewable Energy Laboratory, 15013 Denver W. Parkway, Golden, Colorado 80401, United States
  2. National Renewable Energy Laboratory, 15013 Denver W. Parkway, Golden, Colorado 80401, United States
  3. Metallurgical & Materials Engineering Department, Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, United States
  4. Physics Department, Colorado School of Mines, 1500 Illinois Street, Golden, Colorado 80401, United States
Publication Date:
Research Org.:
Colorado School of Mines, Golden, CO (United States); National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
OSTI Identifier:
1885611
Alternate Identifier(s):
OSTI ID: 1891262; OSTI ID: 1899962
Report Number(s):
NREL/JA-5K00-83325
Journal ID: ISSN 1528-7483
Grant/Contract Number:  
SC0021266; AC36-08GO28308
Resource Type:
Published Article
Journal Name:
Crystal Growth and Design
Additional Journal Information:
Journal Name: Crystal Growth and Design Journal Volume: 22 Journal Issue: 10; Journal ID: ISSN 1528-7483
Publisher:
American Chemical Society
Country of Publication:
France
Language:
English
Subject:
36 MATERIALS SCIENCE; Deposition; Epitaxy; Lattices; Materials; Quality management; Reactive sputtering; Sputtering; Thin films; epitaxy; reactive sputtering; sputtering; thin films

Citation Formats

Schnepf, Rekha R., Tellekamp, M. Brooks, Saenz, Theresa, Mangum, John S., Supple, Edwin, Roberts, Dennice M., Perkins, Craig L., Heinselman, Karen N., Gorman, Brian P., Greenaway, Ann L., Toberer, Eric S., and Tamboli, Adele C. Epitaxial ZnGeP 2 Thin Films on Si and GaP by Reactive Combinatorial Sputtering in Phosphine. France: N. p., 2022. Web. doi:10.1021/acs.cgd.2c00723.
Copy to clipboard
Schnepf, Rekha R., Tellekamp, M. Brooks, Saenz, Theresa, Mangum, John S., Supple, Edwin, Roberts, Dennice M., Perkins, Craig L., Heinselman, Karen N., Gorman, Brian P., Greenaway, Ann L., Toberer, Eric S., & Tamboli, Adele C. Epitaxial ZnGeP 2 Thin Films on Si and GaP by Reactive Combinatorial Sputtering in Phosphine. France. https://doi.org/10.1021/acs.cgd.2c00723
Copy to clipboard
Schnepf, Rekha R., Tellekamp, M. Brooks, Saenz, Theresa, Mangum, John S., Supple, Edwin, Roberts, Dennice M., Perkins, Craig L., Heinselman, Karen N., Gorman, Brian P., Greenaway, Ann L., Toberer, Eric S., and Tamboli, Adele C. Tue . "Epitaxial ZnGeP 2 Thin Films on Si and GaP by Reactive Combinatorial Sputtering in Phosphine". France. https://doi.org/10.1021/acs.cgd.2c00723.
Copy to clipboard
@article{osti_1885611,
title = {Epitaxial ZnGeP 2 Thin Films on Si and GaP by Reactive Combinatorial Sputtering in Phosphine},
author = {Schnepf, Rekha R. and Tellekamp, M. Brooks and Saenz, Theresa and Mangum, John S. and Supple, Edwin and Roberts, Dennice M. and Perkins, Craig L. and Heinselman, Karen N. and Gorman, Brian P. and Greenaway, Ann L. and Toberer, Eric S. and Tamboli, Adele C.},
abstractNote = {Modern optoelectronic devices are constrained to a fixed collection of band gap and lattice parameter combinations by the limited number of semiconductors that can be epitaxially integrated with high crystal quality. II–IV–V2 compounds are promising materials to break this paradigm as changes to the cation lattice site disorder can modify the band gap without a substantial change to the lattice parameter. ZnGeP2 is a particularly interesting member of this group as it is lattice-matched to Si and GaP, but substantial work is needed to understand and improve the epitaxial growth of ZnGeP2. In this paper, we report on the growth of epitaxial ZnGeP2 on Si and GaP substrates via reactive combinatorial sputtering in phosphine gas. Reciprocal space maps revealed that films on both GaP and Si have high crystalline quality, matching that of the substrate. The out-of-plane lattice parameter was found to increase with increasing Ge content, displaying an alloy-like behavior. Films deposited on Si displayed a much larger range for the (004) peak full width at half maximum (FWHM) than those deposited on GaP. Due to the growth of a lower-symmetry material, ZnGeP2, on a higher-symmetry substrate, Si, it is likely that the films grown on Si have antiphase domains and larger threading dislocation densities than those on GaP. Electron channeling contrast imaging revealed the films on GaP to be largely dislocation-free. In the films deposited on Si, the optical absorption onset energies trended toward lower energies with larger (004) FWHM values. These results suggest that the defects in the films on Si that result in a broadened (004) FWHM cause sub-band gap absorption. This work provides the first combinatorial study of epitaxial ZnGeP2 on Si and GaP and demonstrates the strong potential for the growth of high-quality epitaxial ZnGeP2 with future work optimizing synthesis conditions and substrate preparation.},
doi = {10.1021/acs.cgd.2c00723},
journal = {Crystal Growth and Design},
number = 10,
volume = 22,
place = {France},
year = {Tue Sep 06 00:00:00 EDT 2022},
month = {Tue Sep 06 00:00:00 EDT 2022}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1021/acs.cgd.2c00723
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Characterization of ZnSiP 2 Films Grown on Si Substrate by Liquid Phase Epitaxy: Morphology, Composition, and Interface Microstructure
journal, June 2019

  • Zhang, Longzhen; Zhang, Guodong; Cheng, Kui
  • Crystal Growth & Design, Vol. 19, Issue 7
  • DOI: 10.1021/acs.cgd.8b01877

Substrate effects on the epitaxial growth of ZnGeP 2 thin films by open tube organometallic chemical vapor deposition
journal, April 1991

  • Xing, G. C.; Bachmann, K. J.; Posthill, J. B.
  • Journal of Applied Physics, Vol. 69, Issue 8
  • DOI: 10.1063/1.348401

Disorder-tunable ZnGeP 2 for epitaxial top cells on Si
conference, June 2019

  • Schnepf, Rekha R.; Martinez, Aaron D.; Mangum, John S.
  • 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
  • DOI: 10.1109/PVSC40753.2019.8980697

Bandgap engineering of ZnSnP 2 for high-efficiency solar cells
journal, June 2012

  • Scanlon, David O.; Walsh, Aron
  • Applied Physics Letters, Vol. 100, Issue 25
  • DOI: 10.1063/1.4730375

Organometallic chemical vapor deposition of epitaxial ZnGeP2 films on (001) GaP substrates
journal, February 1989

MBE growth of MgGeAs 2 :Mn on GaAs substrate
journal, January 2007

Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
journal, April 2013

  • Grassman, T. J.; Carlin, J. A.; Galiana, B.
  • Applied Physics Letters, Vol. 102, Issue 14
  • DOI: 10.1063/1.4801498

MBE growth of Mn-doped ZnSnAs2 thin films
journal, January 2009

Polar-on-nonpolar epitaxy
journal, February 1987

Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates
journal, March 2010

  • Mori, M. J.; Boles, S. T.; Fitzgerald, E. A.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 28, Issue 2
  • DOI: 10.1116/1.3290762

High-Temperature Nucleation of GaP on V-Grooved Si
journal, September 2020

  • Saenz, Theresa E.; McMahon, William E.; Norman, Andrew G.
  • Crystal Growth & Design, Vol. 20, Issue 10
  • DOI: 10.1021/acs.cgd.0c00875

Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
journal, December 2016

Preparation and properties of CdSnP 2 /InP heterojunctions grown by LPE from Sn solution
journal, March 1974

  • Shay, J. L.; Bachman, K. J.; Buehler, E.
  • Journal of Applied Physics, Vol. 45, Issue 3
  • DOI: 10.1063/1.1663406

Combinatorial Synthesis of Magnesium Tin Nitride Semiconductors
journal, April 2020

  • Greenaway, Ann L.; Loutris, Amanda L.; Heinselman, Karen N.
  • Journal of the American Chemical Society, Vol. 142, Issue 18
  • DOI: 10.1021/jacs.0c02092

COMBIgor: Data-Analysis Package for Combinatorial Materials Science
journal, May 2019

  • Talley, Kevin R.; Bauers, Sage R.; Melamed, Celeste L.
  • ACS Combinatorial Science, Vol. 21, Issue 7
  • DOI: 10.1021/acscombsci.9b00077

GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure
journal, April 2012

  • Beyer, A.; Ohlmann, J.; Liebich, S.
  • Journal of Applied Physics, Vol. 111, Issue 8
  • DOI: 10.1063/1.4706573

Elimination of ‘‘pair’’ defects from GaAs layers grown by molecular beam epitaxy
journal, December 1985

  • Chai, Young G.; Pao, Y‐C.; Hierl, T.
  • Applied Physics Letters, Vol. 47, Issue 12
  • DOI: 10.1063/1.96269

Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications
journal, September 2017

Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory
journal, December 2018

  • Supplie, Oliver; Romanyuk, Oleksandr; Koppka, Christian
  • Progress in Crystal Growth and Characterization of Materials, Vol. 64, Issue 4
  • DOI: 10.1016/j.pcrysgrow.2018.07.002

Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration
journal, April 2020

Epitaxial growth of solid solutions of ZnSiP2 in Si
journal, July 1972

Summary of “IAEA intercomparison of IBA software”
journal, April 2008

  • Barradas, N. P.; Arstila, K.; Battistig, G.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 266, Issue 8
  • DOI: 10.1016/j.nimb.2007.10.043

Robust and synthesizable photocatalysts for CO2 reduction: a data-driven materials discovery
journal, January 2019

  • Singh, Arunima K.; Montoya, Joseph H.; Gregoire, John M.
  • Nature Communications, Vol. 10, Issue 1
  • DOI: 10.1038/s41467-019-08356-1

Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP2
journal, June 2010

  • St-Jean, P.; Seryogin, G. A.; Francoeur, S.
  • Applied Physics Letters, Vol. 96, Issue 23
  • DOI: 10.1063/1.3442917
    Sort by:
    [ × clear filter / sort ]

    Similar Records in DOE PAGES and OSTI.GOV collections: