Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy

Alikin, Denis; Abramov, Alexander; Turygin, Anton; Ievlev, Anton; Pryakhina, Victoria; Karpinsky, Dmitry; Hu, Qingyuan; Jin, Li; Shur, Vladimir; Tselev, Alexander; Kholkin, Andrei

doi:10.1002/smtd.202101289

Title: Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy

Journal Article · 29 December 2021 · Small Methods

DOI: https://doi.org/10.1002/smtd.202101289 · OSTI ID:1885278

^[1]; Abramov, Alexander ^[1]; Turygin, Anton ^[1];

^[2]; Pryakhina, Victoria ^[1]; Karpinsky, Dmitry ^[3]; Hu, Qingyuan ^[4]; Jin, Li ^[4]; Shur, Vladimir ^[1]; Tselev, Alexander ^[5]; Kholkin, Andrei ^[6]

Ural Federal Univ., Ekaterinburg (Russian Federation)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
National Academy of Sciences (NAS) of Belarus, Minsk (Belarus)
Xi'an Univ. of Technology, Shaanxi (China)
Univ. of Aveiro (Portugal)
Ural Federal Univ., Ekaterinburg (Russian Federation); Univ. of Aveiro (Portugal); Tomsk Polytechnic Institute (Russian Federation)

Monitoring the charged defect concentration at the nanoscale is of critical importance for both the fundamental science and applications of ferroelectrics. However, up-to-date, high-resolution study methods for the investigation of structural defects, such as transmission electron microscopy, X-ray tomography, etc., are expensive and demand complicated sample preparation. Here, with an example of the lanthanum-doped bismuth ferrite ceramics, a novel method is proposed based on the switching spectroscopy piezoresponse force microscopy (SSPFM) that allows probing the electric potential from buried subsurface charged defects in the ferroelectric materials with a nanometer-scale spatial resolution. When compared with the composition-sensitive methods, such as neutron diffraction, X-ray photoelectron spectroscopy, and local time-of-flight secondary ion mass spectrometry, the SSPFM sensitivity to the variation of the electric potential from the charged defects is shown to be equivalent to less than 0.3 at% of the defect concentration. Additionally, the possibility to locally evaluate dynamics of the polarization screening caused by the charged defects is demonstrated, which is of significant interest for further understanding defect-mediated processes in ferroelectrics.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; Russian Science Foundation; Centre for Research in Ceramics and Composite Materials (CICECO)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1885278

Journal Information:: Small Methods, Journal Name: Small Methods Journal Issue: 2 Vol. 6; ISSN 2366-9608

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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42 ENGINEERING
bias field
domain walls
hysteresis loops
polarization reversal
screening
vacancies

Title: Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy

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