Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

Mundy, Julia A.; Grosso, Bastien F.; Heikes, Colin A.; Ferenc Segedin, Dan; Wang, Zhe; Shao, Yu-Tsun; Dai, Cheng; Goodge, Berit H.; Meier, Quintin N.; Nelson, Christopher T.; Prasad, Bhagwati; Xue, Fei; Ganschow, Steffen; Muller, David A.; Kourkoutis, Lena F.; Chen, Long-Qing; Ratcliff, William D.; Spaldin, Nicola A.; Ramesh, Ramamoorthy; Schlom, Darrell G.

doi:10.1126/sciadv.abg5860

Title: Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering

Journal Article · 04 February 2022 · Science Advances

DOI: https://doi.org/10.1126/sciadv.abg5860 · OSTI ID:1885227

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^[3]; Ferenc Segedin, Dan ^[4]; Wang, Zhe ^[5]; Shao, Yu-Tsun ^[5]; Dai, Cheng ^[6];

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^[8]; Prasad, Bhagwati ^[9]; Xue, Fei ^[6];

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University of California, Berkeley, CA (United States); Harvard University, Cambridge, MA (United States)
Eidgenoessische Technische Hochschule (ETH), Zurich (Switzerland)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
Harvard University, Cambridge, MA (United States); University of California, Berkeley, CA (United States)
Cornell University, Ithaca, NY (United States)
Pennsylvania State University, University Park, PA (United States)
Cornell University, Ithaca, NY (United States); Kavli Institute, Ithaca, NY (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
University of California, Berkeley, CA (United States)
Leibniz-Institut für Kristallzüchtung, Berlin (Germany)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States); University of Maryland, College Park, MD (United States)
University of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Kavli Institute, Ithaca, NY (United States); Leibniz-Institut für Kristallzüchtung, Berlin (Germany); Cornell University, Ithaca, NY (United States)

Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO₃. By confining thin layers of BiFeO₃ in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; Army Research Office; ETH Zurich; Koerber Foundation; Air Force Office of Scientific Research; National Science Foundation (NSF); Cornell University

Grant/Contract Number:: AC05-00OR22725; AC02-05CH11231; SC0012375

OSTI ID:: 1885227

Journal Information:: Science Advances, Journal Name: Science Advances Journal Issue: 5 Vol. 8; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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